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IRFR3411TRPBF-VB Product details
Back to previous pageProduct introduction：
1. IRFR3411TRPBF-VB Product Introduction
IRFR3411TRPBF-VB is a high-performance single N-channel MOSFET packaged in TO252 and using Trench technology. This MOSFET is designed for applications that require low on-resistance and high current handling capabilities. Its maximum drain-source voltage (VDS) is 100V and its maximum drain current (ID) is 40A, making it suitable for a variety of medium and high voltage power applications. The on-resistance (RDS(ON)) of IRFR3411TRPBF-VB at 10V gate-source voltage is 30mΩ, ensuring low power loss and high efficiency.
IRFR3411TRPBF-VB is a high-performance single N-channel MOSFET packaged in TO252 and using Trench technology. This MOSFET is designed for applications that require low on-resistance and high current handling capabilities. Its maximum drain-source voltage (VDS) is 100V and its maximum drain current (ID) is 40A, making it suitable for a variety of medium and high voltage power applications. The on-resistance (RDS(ON)) of IRFR3411TRPBF-VB at 10V gate-source voltage is 30mΩ, ensuring low power loss and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | 30mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. IRFR3411TRPBF-VB Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Throw-on voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 35mΩ @ VGS=4.5V
- 30mΩ @ VGS=10V
- **Drain current (ID)**: 40A
- **Technology type**: Trench
- **Power dissipation**: Suitable for high current applications, providing high efficiency and low power consumption.
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Throw-on voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 35mΩ @ VGS=4.5V
- 30mΩ @ VGS=10V
- **Drain current (ID)**: 40A
- **Technology type**: Trench
- **Power dissipation**: Suitable for high current applications, providing high efficiency and low power consumption.
Domain and module applications：
III. IRFR3411TRPBF-VB Applications and Module Examples
1. **Power Management**
The low on-resistance and high current handling capability of the IRFR3411TRPBF-VB make it suitable for use in power management systems such as DC-DC converters. It can effectively control the current in the power supply, reduce energy loss, and improve system efficiency.
2. **Motor Drive**
In motor drive circuits, the IRFR3411TRPBF-VB can be used as a high-power switch to control the switching and speed of the motor. Its high current capability ensures that it can handle the high current requirements during motor startup and operation.
3. **Battery Management**
In battery management systems, this MOSFET can be used for battery switches and protection circuits. It can handle high currents while maintaining low on-resistance, thereby optimizing battery performance and life.
4. **Load Switch**
IRFR3411TRPBF-VB is suitable for various load switch applications, such as high power load control. Its low on-resistance helps reduce power loss and improve switching performance.
5. **Inverter**
In inverter applications, IRFR3411TRPBF-VB can be used for high voltage switching to convert DC power to AC. The high current capability and low on-resistance of this MOSFET ensure high efficiency and stability of the inverter.
The low on-resistance, high current handling capability and reliable switching performance of IRFR3411TRPBF-VB make it an excellent performer in high current and medium and high voltage power electronics applications.
1. **Power Management**
The low on-resistance and high current handling capability of the IRFR3411TRPBF-VB make it suitable for use in power management systems such as DC-DC converters. It can effectively control the current in the power supply, reduce energy loss, and improve system efficiency.
2. **Motor Drive**
In motor drive circuits, the IRFR3411TRPBF-VB can be used as a high-power switch to control the switching and speed of the motor. Its high current capability ensures that it can handle the high current requirements during motor startup and operation.
3. **Battery Management**
In battery management systems, this MOSFET can be used for battery switches and protection circuits. It can handle high currents while maintaining low on-resistance, thereby optimizing battery performance and life.
4. **Load Switch**
IRFR3411TRPBF-VB is suitable for various load switch applications, such as high power load control. Its low on-resistance helps reduce power loss and improve switching performance.
5. **Inverter**
In inverter applications, IRFR3411TRPBF-VB can be used for high voltage switching to convert DC power to AC. The high current capability and low on-resistance of this MOSFET ensure high efficiency and stability of the inverter.
The low on-resistance, high current handling capability and reliable switching performance of IRFR3411TRPBF-VB make it an excellent performer in high current and medium and high voltage power electronics applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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