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IRFR330B-VB Product details

Product introduction:

IRFR330B-VB MOSFET Product Introduction

IRFR330B-VB is a high-voltage single N-channel MOSFET, packaged in TO252, manufactured based on SJ_Multi-EPI technology. It has a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of 30V. Its threshold voltage (Vth) is 3.5V, and it can provide an on-resistance (RDS(ON)) of 700mΩ at VGS=10V, and a maximum drain current (ID) of 7A. IRFR330B-VB is designed for high voltage and high current applications, with high voltage resistance and stable performance, suitable for various high voltage power management and control systems.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 650V 3.5V 7A 700mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 650V 3.5V 7A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 650V 3.5V 7A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
IRFR330B-VB Detailed parameter description

- **Model**: IRFR330B-VB
- **Package**: TO252
- **MOSFET configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 700mΩ@VGS=10V
- **Maximum drain current (ID)**: 7A
- **Technology**: SJ_Multi-EPI
- **Operating temperature range**: Typically between -55°C and +150°C

Domain and module applications:

Applications and modules

1. **High-voltage power switch**: IRFR330B-VB is particularly suitable for use in high-voltage power switches due to its 650V drain-source voltage. It is able to handle high-voltage and medium-current switching applications, ensuring the stability and safety of the power system.

2. **Power converter**: In power converters (such as DC-DC converters or AC-DC converters), this MOSFET can effectively handle high-voltage loads. Its high withstand voltage capability and moderate on-resistance enable it to provide stable performance during the conversion process.

3. **Inverter**: In inverter applications, the high withstand voltage and stability of IRFR330B-VB are essential for high-voltage DC to AC conversion. It is able to ensure the reliability and efficiency of the inverter under high-voltage operating conditions.

4. **Electric drive system**: IRFR330B-VB can be applied in electrical drive systems, such as motor drives and electric drive modules. Its high voltage tolerance makes it excel in high voltage drive applications, effectively managing and controlling current.

5. **Power Management Module**: This MOSFET is also widely used in power management modules, especially in applications where high voltage and stable performance are required. It can handle switching tasks in high voltage power supplies, helping to improve the overall performance and reliability of the system.

The high voltage tolerance and stable performance of the IRFR330B-VB make it excellent in high voltage power switches, power converters, inverters, electric drive systems, and power management modules. These features make it an ideal choice for handling high voltage and medium current applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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