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IRFR320BTF-VB Product details

Product introduction:

1. IRFR320BTF-VB Product Introduction

IRFR320BTF-VB is a high-voltage single N-channel MOSFET in TO252 package and adopts SJ_Multi-EPI technology. This MOSFET is designed for high-voltage applications and has high voltage resistance and reliable switching performance. Its maximum drain-source voltage is 650V, which is suitable for working in high-voltage environments. The maximum drain current of IRFR320BTF-VB is 5A, which provides sufficient current handling capability and is suitable for power electronics applications that require high voltage resistance and high reliability. Its on-resistance (RDS(ON)) is 1000mΩ at a gate-source voltage of 10V, ensuring reasonable power loss in the on state.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 650V 3.5V 5A 1000mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 650V 3.5V 5A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 650V 3.5V 5A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
2. IRFR320BTF-VB Detailed parameter description

- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Throughput voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1000mΩ @ VGS=10V
- **Drain current (ID)**: 5A
- **Technology type**: SJ_Multi-EPI
- **Power dissipation**: Provides sufficient power handling capability for high voltage and high power density applications.

Domain and module applications:

3. IRFR320BTF-VB Application Fields and Module Examples

1. **High-voltage Power Management**
IRFR320BTF-VB is suitable for high-voltage power management systems, such as switching power supplies and high-voltage DC-DC converters. Its high drain-source voltage capability enables it to operate stably in high-voltage environments, ensuring the reliability and stability of the power system.

2. **Inverter**
In photovoltaic inverters or other inverter applications, the high withstand voltage characteristics of IRFR320BTF-VB are very important. It can be used for switching high-voltage DC power supplies, converting to AC or other voltage levels to meet system requirements.

3. **Power Converter**
This MOSFET is suitable for high-power power converters, such as industrial power supplies and motor drive systems. Its high withstand voltage and reasonable on-resistance ensure high efficiency and reliability in high-power environments.

4. **Electrical protection**
In high-voltage electrical protection systems, such as overvoltage protection circuits, the IRFR320BTF-VB is able to handle high voltages and provide effective protection functions. Its high drain-source voltage and reliable switching performance ensure that the system can work normally under abnormal conditions.

5. **Industrial control**
This MOSFET is also suitable for high-voltage switching applications in industrial control systems. For example, in motor control, power regulation, and load switching, the IRFR320BTF-VB provides a high-voltage switching solution to meet the requirements of industrial applications.

The high-voltage handling capability and reliable switching performance of the IRFR320BTF-VB enable it to excel in power electronics applications with high voltage and high power density.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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