IRFR320BTF-VB Product details
Product introduction:
IRFR320BTF-VB is a high-voltage single N-channel MOSFET in TO252 package and adopts SJ_Multi-EPI technology. This MOSFET is designed for high-voltage applications and has high voltage resistance and reliable switching performance. Its maximum drain-source voltage is 650V, which is suitable for working in high-voltage environments. The maximum drain current of IRFR320BTF-VB is 5A, which provides sufficient current handling capability and is suitable for power electronics applications that require high voltage resistance and high reliability. Its on-resistance (RDS(ON)) is 1000mΩ at a gate-source voltage of 10V, ensuring reasonable power loss in the on state.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Throughput voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1000mΩ @ VGS=10V
- **Drain current (ID)**: 5A
- **Technology type**: SJ_Multi-EPI
- **Power dissipation**: Provides sufficient power handling capability for high voltage and high power density applications.
Domain and module applications:
1. **High-voltage Power Management**
IRFR320BTF-VB is suitable for high-voltage power management systems, such as switching power supplies and high-voltage DC-DC converters. Its high drain-source voltage capability enables it to operate stably in high-voltage environments, ensuring the reliability and stability of the power system.
2. **Inverter**
In photovoltaic inverters or other inverter applications, the high withstand voltage characteristics of IRFR320BTF-VB are very important. It can be used for switching high-voltage DC power supplies, converting to AC or other voltage levels to meet system requirements.
3. **Power Converter**
This MOSFET is suitable for high-power power converters, such as industrial power supplies and motor drive systems. Its high withstand voltage and reasonable on-resistance ensure high efficiency and reliability in high-power environments.
4. **Electrical protection**
In high-voltage electrical protection systems, such as overvoltage protection circuits, the IRFR320BTF-VB is able to handle high voltages and provide effective protection functions. Its high drain-source voltage and reliable switching performance ensure that the system can work normally under abnormal conditions.
5. **Industrial control**
This MOSFET is also suitable for high-voltage switching applications in industrial control systems. For example, in motor control, power regulation, and load switching, the IRFR320BTF-VB provides a high-voltage switching solution to meet the requirements of industrial applications.
The high-voltage handling capability and reliable switching performance of the IRFR320BTF-VB enable it to excel in power electronics applications with high voltage and high power density.
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