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IRFR2405TRPBF-VB Product details
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Product Introduction
**IRFR2405TRPBF-VB** is a high performance N-channel MOSFET in a TO252 package. It is designed for medium to high current, high efficiency applications, with a maximum drain-source voltage (VDS) of 60V and a drain current (ID) of 58A. This MOSFET uses Trench technology to provide extremely low on-resistance. The low on-resistance and high current handling capability of the IRFR2405TRPBF-VB make it ideal for circuits requiring efficient switching and energy transfer.
**IRFR2405TRPBF-VB** is a high performance N-channel MOSFET in a TO252 package. It is designed for medium to high current, high efficiency applications, with a maximum drain-source voltage (VDS) of 60V and a drain current (ID) of 58A. This MOSFET uses Trench technology to provide extremely low on-resistance. The low on-resistance and high current handling capability of the IRFR2405TRPBF-VB make it ideal for circuits requiring efficient switching and energy transfer.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: IRFR2405TRPBF-VB
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 13mΩ (VGS = 4.5V)
- 10mΩ (VGS = 10V)
- **Drain current (ID)**: 58A
- **Technology**: Trench technology
- **Model**: IRFR2405TRPBF-VB
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 13mΩ (VGS = 4.5V)
- 10mΩ (VGS = 10V)
- **Drain current (ID)**: 58A
- **Technology**: Trench technology
Domain and module applications：
Applications and Module Examples
1. **Power Management**:
- IRFR2405TRPBF-VB is ideal for efficient power management systems. In power converters, the low on-resistance (10mΩ@VGS=10V) of this MOSFET helps reduce power losses and improve efficiency. Its ability to handle higher currents (58A) makes it an excellent choice for high-power power supply designs.
2. **DC-DC Converters**:
- In DC-DC converters, this MOSFET provides reliable switching control. Its low on-resistance and high current capability enable it to effectively support efficient voltage conversion processes, making it suitable for converter designs that require high current and high efficiency.
3. **Motor Drive**:
- IRFR2405TRPBF-VB is suitable for motor drive applications, especially under high current and medium voltage conditions. Its high drain current capability (58A) and low on-resistance enable it to handle high currents in motor drives and provide stable switching performance.
4. **Battery Management System**:
- In a battery management system, the IRFR2405TRPBF-VB can be used to protect and control the battery charge and discharge process. Its high current handling capability and low on-resistance enable it to effectively manage the current flow of the battery, ensuring the stability and efficiency of the battery system.
These application examples demonstrate the excellent performance of the IRFR2405TRPBF-VB in handling high currents and medium voltages, making it particularly suitable for power management, motor drives, DC-DC converters, and battery management systems.
1. **Power Management**:
- IRFR2405TRPBF-VB is ideal for efficient power management systems. In power converters, the low on-resistance (10mΩ@VGS=10V) of this MOSFET helps reduce power losses and improve efficiency. Its ability to handle higher currents (58A) makes it an excellent choice for high-power power supply designs.
2. **DC-DC Converters**:
- In DC-DC converters, this MOSFET provides reliable switching control. Its low on-resistance and high current capability enable it to effectively support efficient voltage conversion processes, making it suitable for converter designs that require high current and high efficiency.
3. **Motor Drive**:
- IRFR2405TRPBF-VB is suitable for motor drive applications, especially under high current and medium voltage conditions. Its high drain current capability (58A) and low on-resistance enable it to handle high currents in motor drives and provide stable switching performance.
4. **Battery Management System**:
- In a battery management system, the IRFR2405TRPBF-VB can be used to protect and control the battery charge and discharge process. Its high current handling capability and low on-resistance enable it to effectively manage the current flow of the battery, ensuring the stability and efficiency of the battery system.
These application examples demonstrate the excellent performance of the IRFR2405TRPBF-VB in handling high currents and medium voltages, making it particularly suitable for power management, motor drives, DC-DC converters, and battery management systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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