中文
English
IRFR2307ZTRPBF-VB Product details
Back to previous pageProduct introduction：
IRFR2307ZTRPBF-VB MOSFET Product Introduction:
IRFR2307ZTRPBF-VB is a high-performance single N-channel MOSFET in TO252 package. This MOSFET is manufactured using Trench technology and has a drain-source voltage (VDS) tolerance of up to 100V and excellent conduction performance. Its on-resistance (RDS(ON)) is 18mΩ at VGS=10V, and it can carry a drain current (ID) of up to 45A. Its threshold voltage (Vth) is 1.8V, allowing it to switch effectively at low gate voltages. The high current carrying capacity and low on-resistance of the IRFR2307ZTRPBF-VB make it suitable for a variety of high-efficiency power conversion and switching applications.
IRFR2307ZTRPBF-VB is a high-performance single N-channel MOSFET in TO252 package. This MOSFET is manufactured using Trench technology and has a drain-source voltage (VDS) tolerance of up to 100V and excellent conduction performance. Its on-resistance (RDS(ON)) is 18mΩ at VGS=10V, and it can carry a drain current (ID) of up to 45A. Its threshold voltage (Vth) is 1.8V, allowing it to switch effectively at low gate voltages. The high current carrying capacity and low on-resistance of the IRFR2307ZTRPBF-VB make it suitable for a variety of high-efficiency power conversion and switching applications.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 45A | 18mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
IRFR2307ZTRPBF-VB Detailed parameter description:
- **Model**: IRFR2307ZTRPBF-VB
- **Package**: TO252
- **MOSFET configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 18mΩ@VGS=10V
- **Maximum drain current (ID)**: 45A
- **Technology**: Trench technology
- **Operating temperature range**: Typically between -55°C to +150°C
- **Model**: IRFR2307ZTRPBF-VB
- **Package**: TO252
- **MOSFET configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 18mΩ@VGS=10V
- **Maximum drain current (ID)**: 45A
- **Technology**: Trench technology
- **Operating temperature range**: Typically between -55°C to +150°C
Domain and module applications：
Applications and modules:
1. **DC-DC converter**: The low on-resistance and high current carrying capacity of IRFR2307ZTRPBF-VB make it very suitable for high-efficiency DC-DC converters. In these applications, it can provide efficient switching performance, reduce power loss and improve conversion efficiency.
2. **Power management system**: In power management systems, such as battery management systems and power distribution modules, this MOSFET can effectively control power switches and handle high current loads, thereby improving system reliability and stability.
3. **Motor driver**: IRFR2307ZTRPBF-VB is suitable for motor drive applications. Its high current carrying capacity can meet the requirements of motor control systems for high current and high efficiency, ensuring smooth motor operation and control.
4. **High-efficiency LED driver**: In high-efficiency LED drivers, the low on-resistance and high current carrying capacity of this MOSFET enable it to stably drive LED loads, ensuring high brightness and long life.
The high current carrying capability, low on-resistance and wide operating voltage range of the IRFR2307ZTRPBF-VB enable it to perform well in applications such as DC-DC converters, power management systems, motor drivers and high-efficiency LED drivers, providing high efficiency and stable switching performance.
1. **DC-DC converter**: The low on-resistance and high current carrying capacity of IRFR2307ZTRPBF-VB make it very suitable for high-efficiency DC-DC converters. In these applications, it can provide efficient switching performance, reduce power loss and improve conversion efficiency.
2. **Power management system**: In power management systems, such as battery management systems and power distribution modules, this MOSFET can effectively control power switches and handle high current loads, thereby improving system reliability and stability.
3. **Motor driver**: IRFR2307ZTRPBF-VB is suitable for motor drive applications. Its high current carrying capacity can meet the requirements of motor control systems for high current and high efficiency, ensuring smooth motor operation and control.
4. **High-efficiency LED driver**: In high-efficiency LED drivers, the low on-resistance and high current carrying capacity of this MOSFET enable it to stably drive LED loads, ensuring high brightness and long life.
The high current carrying capability, low on-resistance and wide operating voltage range of the IRFR2307ZTRPBF-VB enable it to perform well in applications such as DC-DC converters, power management systems, motor drivers and high-efficiency LED drivers, providing high efficiency and stable switching performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
