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IRFR220NCTRPBF-VB Product details
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IRFR220NCTRPBF-VB MOSFET Product Introduction:
IRFR220NCTRPBF-VB is a high voltage, single N-channel MOSFET packaged in TO252 and designed with Trench technology. The MOSFET can withstand a drain-source voltage (VDS) of up to 200V and has an on-resistance (RDS(ON)) of 245mΩ at VGS=10V. The maximum drain current (ID) is 10A and the threshold voltage (Vth) is 3V. This makes the IRFR220NCTRPBF-VB perform well in high voltage and medium current applications, providing reliable switching performance and high efficiency.
IRFR220NCTRPBF-VB is a high voltage, single N-channel MOSFET packaged in TO252 and designed with Trench technology. The MOSFET can withstand a drain-source voltage (VDS) of up to 200V and has an on-resistance (RDS(ON)) of 245mΩ at VGS=10V. The maximum drain current (ID) is 10A and the threshold voltage (Vth) is 3V. This makes the IRFR220NCTRPBF-VB perform well in high voltage and medium current applications, providing reliable switching performance and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | 245mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
IRFR220NCTRPBF-VB Detailed parameter description:
- **Model**: IRFR220NCTRPBF-VB
- **Package**: TO252
- **MOSFET configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 245mΩ@VGS=10V
- **Maximum drain current (ID)**: 10A
- **Technology**: Trench technology
- **Operating temperature range**: Typically between -55°C and +150°C
- **Model**: IRFR220NCTRPBF-VB
- **Package**: TO252
- **MOSFET configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 245mΩ@VGS=10V
- **Maximum drain current (ID)**: 10A
- **Technology**: Trench technology
- **Operating temperature range**: Typically between -55°C and +150°C
Domain and module applications：
Applications and modules:
1. **High voltage switching power supply**: The 200V drain-source voltage tolerance of the IRFR220NCTRPBF-VB makes it ideal for use in high voltage switching power supplies. In these applications, it can effectively manage high voltage loads and provide stable switching performance, thereby improving the overall efficiency and reliability of the power supply.
2. **Power management system**: In power management systems, such as battery management systems and power modules, the high voltage and moderate on-resistance of this MOSFET enable it to effectively control the power switch operation to ensure the stability and safety of the system.
3. **Motor driver**: The IRFR220NCTRPBF-VB can be used in motor drive applications that require medium current and high voltage. Its high voltage tolerance and stable switching performance can meet the requirements of motor control systems for high voltage switching.
4. **LED driver**: In LED drive applications that need to handle high voltages, this MOSFET can provide reliable switching performance to control the current and brightness of the LED load. Its high voltage withstand capability ensures stability and long life in LED drive systems.
The high voltage withstand capability and low on-resistance of the IRFR220NCTRPBF-VB make it suitable for high voltage switching power supplies, power management systems, motor drivers, and LED drivers, providing high efficiency and stable switching performance.
1. **High voltage switching power supply**: The 200V drain-source voltage tolerance of the IRFR220NCTRPBF-VB makes it ideal for use in high voltage switching power supplies. In these applications, it can effectively manage high voltage loads and provide stable switching performance, thereby improving the overall efficiency and reliability of the power supply.
2. **Power management system**: In power management systems, such as battery management systems and power modules, the high voltage and moderate on-resistance of this MOSFET enable it to effectively control the power switch operation to ensure the stability and safety of the system.
3. **Motor driver**: The IRFR220NCTRPBF-VB can be used in motor drive applications that require medium current and high voltage. Its high voltage tolerance and stable switching performance can meet the requirements of motor control systems for high voltage switching.
4. **LED driver**: In LED drive applications that need to handle high voltages, this MOSFET can provide reliable switching performance to control the current and brightness of the LED load. Its high voltage withstand capability ensures stability and long life in LED drive systems.
The high voltage withstand capability and low on-resistance of the IRFR220NCTRPBF-VB make it suitable for high voltage switching power supplies, power management systems, motor drivers, and LED drivers, providing high efficiency and stable switching performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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