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IRFR214ATF-VB Product details
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Product Introduction
IRFR214ATF-VB is a high voltage N-channel MOSFET in TO252 package, designed for medium and high voltage switching applications. It has a maximum drain-source voltage (VDS) of 250V and a gate-source voltage (VGS) of ±20V. The turn-on threshold voltage (Vth) of this MOSFET is 3V, the on-resistance (RDS(ON)) is 640mΩ@VGS=10V, and the maximum drain current (ID) is 4.5A. IRFR214ATF-VB uses Trench technology to provide excellent switching performance and high voltage tolerance, suitable for various medium and high voltage switching and power management applications.
IRFR214ATF-VB is a high voltage N-channel MOSFET in TO252 package, designed for medium and high voltage switching applications. It has a maximum drain-source voltage (VDS) of 250V and a gate-source voltage (VGS) of ±20V. The turn-on threshold voltage (Vth) of this MOSFET is 3V, the on-resistance (RDS(ON)) is 640mΩ@VGS=10V, and the maximum drain current (ID) is 4.5A. IRFR214ATF-VB uses Trench technology to provide excellent switching performance and high voltage tolerance, suitable for various medium and high voltage switching and power management applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 250V | 3V | 4.5A | 640mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 250V | 3V | 4.5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 250V | 3V | 4.5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package**: TO252
- **Polarity**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 250V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 640mΩ @ VGS=10V
- **Maximum drain current (ID)**: 4.5A
- **Power consumption (Ptot)**: 40W
- **Operating temperature range**: -55°C to +150°C
- **Technology**: Trench
- **Package**: TO252
- **Polarity**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 250V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 640mΩ @ VGS=10V
- **Maximum drain current (ID)**: 4.5A
- **Power consumption (Ptot)**: 40W
- **Operating temperature range**: -55°C to +150°C
- **Technology**: Trench
Domain and module applications：
Applications and module examples
1. **High-voltage switching power supply**: The high drain-source voltage and low on-resistance of the IRFR214ATF-VB make it ideal for high-voltage switching power supply systems, such as industrial power supplies and power adapters. In these applications, it can effectively switch high-voltage power supplies, providing stable power conversion and management.
2. **Power management module**: In power management modules, such as power management ICs and power converters, the high withstand voltage characteristics of the IRFR214ATF-VB enable it to handle large voltage fluctuations. It can operate stably in high-voltage environments, ensuring system reliability and efficiency.
3. **Motor drive**: This MOSFET is also suitable for medium- and high-voltage motor drive applications, such as power tools and high-voltage motor control systems. Its excellent switching performance enables efficient motor control, providing smooth operation and long life.
4. **Battery management system**: In battery management systems, such as high-voltage battery protection circuits, the IRFR214ATF-VB can be used to control the battery charging and discharging process. Its high voltage tolerance and stability ensure the safety and reliability of the battery system and prevent overcharge or over discharge.
IRFR214ATF-VB provides a reliable solution for applications such as high-voltage switching power supplies, power management modules, motor drives and battery management systems through its high voltage tolerance and good switching performance.
1. **High-voltage switching power supply**: The high drain-source voltage and low on-resistance of the IRFR214ATF-VB make it ideal for high-voltage switching power supply systems, such as industrial power supplies and power adapters. In these applications, it can effectively switch high-voltage power supplies, providing stable power conversion and management.
2. **Power management module**: In power management modules, such as power management ICs and power converters, the high withstand voltage characteristics of the IRFR214ATF-VB enable it to handle large voltage fluctuations. It can operate stably in high-voltage environments, ensuring system reliability and efficiency.
3. **Motor drive**: This MOSFET is also suitable for medium- and high-voltage motor drive applications, such as power tools and high-voltage motor control systems. Its excellent switching performance enables efficient motor control, providing smooth operation and long life.
4. **Battery management system**: In battery management systems, such as high-voltage battery protection circuits, the IRFR214ATF-VB can be used to control the battery charging and discharging process. Its high voltage tolerance and stability ensure the safety and reliability of the battery system and prevent overcharge or over discharge.
IRFR214ATF-VB provides a reliable solution for applications such as high-voltage switching power supplies, power management modules, motor drives and battery management systems through its high voltage tolerance and good switching performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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