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IRFR212-VB Product details
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IRFR212-VB MOSFET Product Introduction:
IRFR212-VB is a high voltage, single P-channel MOSFET in TO252 package, manufactured based on Trench technology. It has a drain-source voltage (VDS) of up to -200V and a drain current (ID) of -3.6A. Its threshold voltage (Vth) is -2.5V, and its on-resistance (RDS(ON)) is 1160mΩ at VGS=10V, providing reliable high-voltage switching capability. The high withstand voltage and moderate on-resistance of this MOSFET make it excel in applications requiring high voltage control and load switching.
IRFR212-VB is a high voltage, single P-channel MOSFET in TO252 package, manufactured based on Trench technology. It has a drain-source voltage (VDS) of up to -200V and a drain current (ID) of -3.6A. Its threshold voltage (Vth) is -2.5V, and its on-resistance (RDS(ON)) is 1160mΩ at VGS=10V, providing reliable high-voltage switching capability. The high withstand voltage and moderate on-resistance of this MOSFET make it excel in applications requiring high voltage control and load switching.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -200V | -2.5V | -3.6A | 1160mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -200V | -2.5V | -3.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -200V | -2.5V | -3.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
IRFR212-VB Detailed parameter description:
- **Model**: IRFR212-VB
- **Package**: TO252
- **MOSFET configuration**: Single-P-Channel
- **Drain-source voltage (VDS)**: -200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2.5V
- **On-resistance (RDS(ON))**: 1160mΩ@VGS=10V
- **Maximum drain current (ID)**: -3.6A
- **Technology**: Trench technology
- **Operating temperature range**: Typically between -55°C to +150°C
- **Model**: IRFR212-VB
- **Package**: TO252
- **MOSFET configuration**: Single-P-Channel
- **Drain-source voltage (VDS)**: -200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2.5V
- **On-resistance (RDS(ON))**: 1160mΩ@VGS=10V
- **Maximum drain current (ID)**: -3.6A
- **Technology**: Trench technology
- **Operating temperature range**: Typically between -55°C to +150°C
Domain and module applications：
Applications and modules:
1. **High voltage switching power supply**: The -200V withstand voltage capability of IRFR212-VB makes it suitable for high voltage switching power supply design. In these applications, it can effectively handle high voltage loads and provide stable switching performance, thereby improving the overall efficiency and reliability of the system.
2. **Load switch**: In switching applications that need to control high voltage loads, such as high voltage load management systems, the high voltage withstand capability and moderate on-resistance of this MOSFET make it an ideal choice. It can provide efficient switching performance in load switches and reduce power losses.
3. **Power management system**: In high voltage power management systems, such as battery management systems and industrial power modules, the high voltage withstand capability and reliable switching performance of IRFR212-VB help to stabilize the switching operation of the control power supply and ensure the safety and stability of the system.
4. **High-voltage load drive**: In applications that require driving high-voltage loads, this MOSFET can provide stable performance and is suitable for scenarios that require high voltage and high load tolerance, such as power switching and high-voltage drive systems.
The high voltage tolerance and moderate on-resistance of the IRFR212-VB enable it to perform well in applications such as high-voltage switching power supplies, load switches, power management systems, and high-voltage load drives, providing reliable switching performance and system stability.
1. **High voltage switching power supply**: The -200V withstand voltage capability of IRFR212-VB makes it suitable for high voltage switching power supply design. In these applications, it can effectively handle high voltage loads and provide stable switching performance, thereby improving the overall efficiency and reliability of the system.
2. **Load switch**: In switching applications that need to control high voltage loads, such as high voltage load management systems, the high voltage withstand capability and moderate on-resistance of this MOSFET make it an ideal choice. It can provide efficient switching performance in load switches and reduce power losses.
3. **Power management system**: In high voltage power management systems, such as battery management systems and industrial power modules, the high voltage withstand capability and reliable switching performance of IRFR212-VB help to stabilize the switching operation of the control power supply and ensure the safety and stability of the system.
4. **High-voltage load drive**: In applications that require driving high-voltage loads, this MOSFET can provide stable performance and is suitable for scenarios that require high voltage and high load tolerance, such as power switching and high-voltage drive systems.
The high voltage tolerance and moderate on-resistance of the IRFR212-VB enable it to perform well in applications such as high-voltage switching power supplies, load switches, power management systems, and high-voltage load drives, providing reliable switching performance and system stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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