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IRFR210TRR-VB Product details
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Product Introduction
IRFR210TRR-VB is a high voltage N-channel MOSFET in TO252 package. It has a drain-source voltage (VDS) of 200V, making it suitable for high voltage applications. The MOSFET supports a drain current (ID) of up to 5A and uses Trench technology to provide stable performance. The on-resistance (RDS(ON)) of IRFR210TRR-VB is 850mΩ@VGS=10V, providing good current control and switching performance within its voltage range. The turn-on voltage (Vth) is 3V, ensuring reliable turn-on at medium gate-source voltage.
IRFR210TRR-VB is a high voltage N-channel MOSFET in TO252 package. It has a drain-source voltage (VDS) of 200V, making it suitable for high voltage applications. The MOSFET supports a drain current (ID) of up to 5A and uses Trench technology to provide stable performance. The on-resistance (RDS(ON)) of IRFR210TRR-VB is 850mΩ@VGS=10V, providing good current control and switching performance within its voltage range. The turn-on voltage (Vth) is 3V, ensuring reliable turn-on at medium gate-source voltage.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 5A | 850mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
1. **Device type**: N-channel MOSFET
2. **Package type**: TO252
3. **Drain-source voltage (VDS)**: 200V
4. **Gate-source voltage (VGS)**: ±20V
5. **Throw-on voltage (Vth)**: 3V
6. **On-resistance (RDS(ON))**:
- 850mΩ @ VGS=10V
7. **Drain current (ID)**: 5A
8. **Technology type**: Trench
9. **Operating temperature range**: -55°C to 150°C
1. **Device type**: N-channel MOSFET
2. **Package type**: TO252
3. **Drain-source voltage (VDS)**: 200V
4. **Gate-source voltage (VGS)**: ±20V
5. **Throw-on voltage (Vth)**: 3V
6. **On-resistance (RDS(ON))**:
- 850mΩ @ VGS=10V
7. **Drain current (ID)**: 5A
8. **Technology type**: Trench
9. **Operating temperature range**: -55°C to 150°C
Domain and module applications：
Applicable fields and module examples
The high withstand voltage and medium current capability of IRFR210TRR-VB make it suitable for a variety of fields and applications:
1. **Power management**: In high voltage power management systems, such as high voltage DC-DC converters and switch mode power supplies (SMPS), IRFR210TRR-VB is able to handle high voltage switching requirements. Its high withstand voltage characteristics enable it to work stably at high voltages, suitable for power conversion and management applications that require high voltage stability.
2. **Industrial control systems**: In industrial control systems, IRFR210TRR-VB can be used for high voltage switching and protection circuits. Its high withstand voltage characteristics and stable performance ensure the protection of equipment and effective control of power in industrial environments.
3. **Electric vehicles**: In high voltage battery management and charging systems of electric vehicles, this MOSFET can be used as a high voltage switch and protection element. It can operate reliably under high voltage conditions and effectively manage and protect the battery system.
4. **High Power Switching Applications**: In switching applications that need to handle high voltages, such as high power inverters and power amplifiers, the high withstand voltage and medium current handling capabilities of the IRFR210TRR-VB make it suitable for use in these applications that require high voltage stability and high power switching.
In these applications, the IRFR210TRR-VB provides reliable high voltage handling capabilities and good switching performance, ensuring stable operation in high voltage and high power environments.
The high withstand voltage and medium current capability of IRFR210TRR-VB make it suitable for a variety of fields and applications:
1. **Power management**: In high voltage power management systems, such as high voltage DC-DC converters and switch mode power supplies (SMPS), IRFR210TRR-VB is able to handle high voltage switching requirements. Its high withstand voltage characteristics enable it to work stably at high voltages, suitable for power conversion and management applications that require high voltage stability.
2. **Industrial control systems**: In industrial control systems, IRFR210TRR-VB can be used for high voltage switching and protection circuits. Its high withstand voltage characteristics and stable performance ensure the protection of equipment and effective control of power in industrial environments.
3. **Electric vehicles**: In high voltage battery management and charging systems of electric vehicles, this MOSFET can be used as a high voltage switch and protection element. It can operate reliably under high voltage conditions and effectively manage and protect the battery system.
4. **High Power Switching Applications**: In switching applications that need to handle high voltages, such as high power inverters and power amplifiers, the high withstand voltage and medium current handling capabilities of the IRFR210TRR-VB make it suitable for use in these applications that require high voltage stability and high power switching.
In these applications, the IRFR210TRR-VB provides reliable high voltage handling capabilities and good switching performance, ensuring stable operation in high voltage and high power environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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