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IRFR210TRPBF-VB Product details

Product introduction:

IRFR210TRPBF-VB Product Introduction
IRFR210TRPBF-VB is a high-performance single-channel N-type MOSFET with a TO252 package type. This MOSFET is designed to handle medium voltage and power applications, with a drain-source voltage (VDS) of up to 200V and a gate-source voltage (VGS) of up to ±20V. The threshold voltage is 3V, the on-resistance (RDS(ON)) is 850mΩ at VGS=10V, and it can provide a maximum continuous drain current of 5A. Using Trench technology, IRFR210TRPBF-VB provides stable switching performance and good current handling capability, suitable for a variety of power switching applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 200V 3V 5A 850mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 200V 3V 5A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 200V 3V 5A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
IRFR210TRPBF-VB Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single channel N-type MOSFET
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 850mΩ (at VGS=10V)
- **Continuous drain current (ID)**: 5A
- **Technology**: Trench
- **Maximum power consumption**: Depends on thermal design and working environment
- **Thermal resistance**: Depends on package and thermal configuration

Domain and module applications:

Applicable fields and modules
The characteristics of IRFR210TRPBF-VB make it suitable for use in multiple fields and modules. The specific applications are as follows:

1. **Power switch**: In power switch applications, IRFR210TRPBF-VB can be used for power management and switch control. Its 200V withstand voltage and 5A current capability enable it to handle medium power loads, making it suitable for power module and switching power supply design.

2. **Power conversion**: As a switching element in a power converter, the Trench technology and low on-resistance of this MOSFET make it stable in power conversion applications. It is suitable for DC-DC converters and other power conversion circuits that require high efficiency.

3. **Load switch**: In load switch applications, IRFR210TRPBF-VB can efficiently switch various loads, especially when medium current handling capability is required. It is suitable for load switch control in industrial control systems and household appliances.

4. **Battery protection**: This MOSFET can be used in battery protection circuits to help manage the battery's charge and discharge process. Its high withstand voltage and stable switching performance enable it to effectively protect the battery from overcurrent or overvoltage damage.

5. **Low power inverter**: In low power inverter applications, the high withstand voltage and stable conduction performance of the IRFR210TRPBF-VB make it an ideal choice. It can handle medium power power conversion tasks, such as inverter designs in small solar inverters or wind power generation systems.

The design and performance of the IRFR210TRPBF-VB enable it to excel in applications such as power switching, power conversion, load switching, battery protection, and low power inverters, and can meet a variety of power and current handling needs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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