IRFR210TRPBF-VB Product details
Product introduction:
IRFR210TRPBF-VB is a high-performance single-channel N-type MOSFET with a TO252 package type. This MOSFET is designed to handle medium voltage and power applications, with a drain-source voltage (VDS) of up to 200V and a gate-source voltage (VGS) of up to ±20V. The threshold voltage is 3V, the on-resistance (RDS(ON)) is 850mΩ at VGS=10V, and it can provide a maximum continuous drain current of 5A. Using Trench technology, IRFR210TRPBF-VB provides stable switching performance and good current handling capability, suitable for a variety of power switching applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 5A | 850mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
- **Package type**: TO252
- **Configuration**: Single channel N-type MOSFET
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 850mΩ (at VGS=10V)
- **Continuous drain current (ID)**: 5A
- **Technology**: Trench
- **Maximum power consumption**: Depends on thermal design and working environment
- **Thermal resistance**: Depends on package and thermal configuration
Domain and module applications:
The characteristics of IRFR210TRPBF-VB make it suitable for use in multiple fields and modules. The specific applications are as follows:
1. **Power switch**: In power switch applications, IRFR210TRPBF-VB can be used for power management and switch control. Its 200V withstand voltage and 5A current capability enable it to handle medium power loads, making it suitable for power module and switching power supply design.
2. **Power conversion**: As a switching element in a power converter, the Trench technology and low on-resistance of this MOSFET make it stable in power conversion applications. It is suitable for DC-DC converters and other power conversion circuits that require high efficiency.
3. **Load switch**: In load switch applications, IRFR210TRPBF-VB can efficiently switch various loads, especially when medium current handling capability is required. It is suitable for load switch control in industrial control systems and household appliances.
4. **Battery protection**: This MOSFET can be used in battery protection circuits to help manage the battery's charge and discharge process. Its high withstand voltage and stable switching performance enable it to effectively protect the battery from overcurrent or overvoltage damage.
5. **Low power inverter**: In low power inverter applications, the high withstand voltage and stable conduction performance of the IRFR210TRPBF-VB make it an ideal choice. It can handle medium power power conversion tasks, such as inverter designs in small solar inverters or wind power generation systems.
The design and performance of the IRFR210TRPBF-VB enable it to excel in applications such as power switching, power conversion, load switching, battery protection, and low power inverters, and can meet a variety of power and current handling needs.
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