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IRFR210B-VB Product details

Product introduction:

1. IRFR210B-VB Product Introduction

IRFR210B-VB is a high voltage N-channel MOSFET that uses Trench technology and is packaged in a TO252 housing. The device has a drain-source voltage (VDS) of 200V, a gate-source voltage (VGS) range of ±20V, and a turn-on voltage (Vth) of 3V. When the gate-source voltage is 10V, its on-resistance (RDS(ON)) is 850mΩ and the maximum drain current (ID) is 5A. This MOSFET is designed mainly for medium and high voltage applications. It can provide stable switching performance and high current handling capability, and is suitable for various power management and switch control scenarios.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 200V 3V 5A 850mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 200V 3V 5A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 200V 3V 5A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
2. IRFR210B-VB Detailed parameter description

- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Throw-on voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 850mΩ @ VGS = 10V
- **Drain current (ID)**: 5A
- **Maximum power dissipation (Ptot)**: 65W
- **Operating temperature range**: -55°C to 175°C
- **Switching time**: Suitable for medium frequency applications
- **Technology**: Trench technology
- **Input capacitance (Ciss)**: 2600pF
- **Output capacitance (Coss)**: 950pF

Domain and module applications:

3. Application fields and module examples

The characteristics of IRFR210B-VB make it suitable for the following fields and modules:

1. **Power switch**: In power switch applications, IRFR210B-VB can withstand high voltages of 200V and handle currents up to 5A. Its higher on-resistance is suitable for applications where the current is not too high and can provide stable switching functions. This MOSFET is suitable for low to medium power switching applications in power management systems.

2. **Load switch**: This MOSFET can work effectively in load switch applications to control the switching of smaller power loads. Its 3V turn-on voltage ensures that the switch can be effectively driven under low voltage signals, which is suitable for use in home appliances and small industrial equipment.

3. **Low to medium power inverter**: It is suitable for low to medium power inverter systems, such as solar inverters. IRFR210B-VB's 200V withstand voltage and 5A current capability can meet the needs of inverters, especially in applications where the power requirements are not particularly high.

4. **Power tools**: In the drive circuits of some power tools, this MOSFET can be used as a switching element to control the switching of current. Its higher voltage and current specifications make it suitable for low- and medium-power power tool control.

5. **Low-power lighting control**: IRFR210B-VB is suitable for switching applications in low-power lighting control systems. Its higher on-resistance makes it suitable for handling relatively small powers, and can effectively manage and control the on-off state of lighting equipment.

The medium- and high-voltage and current handling capabilities, moderate on-resistance, and good switching performance of IRFR210B-VB make it widely used in power management, load switching, inverters, power tools, and lighting control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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