Featured Model

IRFR18N15DPBF-VB Product details

Product introduction:

IRFR18N15DPBF-VB MOSFET Product Introduction:
IRFR18N15DPBF-VB is a single N-channel MOSFET in TO252 package, designed based on Trench technology, suitable for medium voltage and current applications. The MOSFET has a drain-source voltage (VDS) of 150V, a drain current (ID) of 25.4A, a gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of 2.5V. At VGS=10V, the on-resistance (RDS(ON)) is 74mΩ. Its high voltage tolerance and low on-resistance enable it to perform well in applications such as power management and switching power supplies, providing high efficiency and stability.

File download

Download PDF document
Download now

Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 150V 2.5V 25.4A 74mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 150V 2.5V 25.4A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 150V 2.5V 25.4A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
IRFR18N15DPBF-VB Detailed parameter description:
- **Model**: IRFR18N15DPBF-VB
- **Package**: TO252
- **MOSFET configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 150V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**: 74mΩ@VGS=10V
- **Maximum drain current (ID)**: 25.4A
- **Technology**: Trench technology
- **Operating temperature range**: Typically between -55°C to +150°C

Domain and module applications:

Applications and modules:
1. **DC-DC converter**: The 150V withstand voltage and 25.4A current capability of IRFR18N15DPBF-VB make it very suitable for DC-DC converters. It can provide efficient switching performance at high voltage and medium current, reduce power loss and improve conversion efficiency.

2. **Power management system**: In power management systems, such as power supply modules and battery management systems, the high voltage and high current handling capabilities of this MOSFET make it an ideal choice. It can effectively manage the switching operation of the power supply to ensure the stability and efficiency of the system.

3. **Motor drive**: In motor drive applications that need to handle high voltage and medium current, IRFR18N15DPBF-VB can provide reliable switching performance. Its high voltage withstand capability and low on-resistance enable it to effectively control the current of the motor and provide smooth drive.

4. **LED Driver**: In high voltage LED drive applications, IRFR18N15DPBF-VB can stably drive LED loads to ensure the brightness and life of the LED system. Its low on-resistance and high current capability make it an excellent performer in LED lighting control.

The high voltage withstand capability and low on-resistance of IRFR18N15DPBF-VB make it suitable for applications such as high voltage DC-DC converters, power management systems, motor drivers, and LED drivers, providing high efficiency and reliable switching performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

Sample Req

QQ

Telephone

400-655-8788

WeChat

WeChat

Topping

Sample Req
Online
Telephone
WeChat