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IRFR13N20-VB Product details
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IRFR13N20-VB Product Introduction
IRFR13N20-VB is a single-channel N-type MOSFET with a TO252 package type. This MOSFET is designed to handle medium and high voltage applications with high performance and reliability. Its drain-source voltage (VDS) can reach a maximum of 200V, and the gate-source voltage (VGS) is a maximum of ±20V. The device has a threshold voltage of 3V, an on-resistance (RDS(ON)) of 55mΩ at VGS=10V, and can provide a continuous drain current of up to 30A. IRFR13N20-VB uses Trench technology to optimize on-resistance and switching performance, making it suitable for a variety of power switching applications.
IRFR13N20-VB is a single-channel N-type MOSFET with a TO252 package type. This MOSFET is designed to handle medium and high voltage applications with high performance and reliability. Its drain-source voltage (VDS) can reach a maximum of 200V, and the gate-source voltage (VGS) is a maximum of ±20V. The device has a threshold voltage of 3V, an on-resistance (RDS(ON)) of 55mΩ at VGS=10V, and can provide a continuous drain current of up to 30A. IRFR13N20-VB uses Trench technology to optimize on-resistance and switching performance, making it suitable for a variety of power switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 30A | 55mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 30A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 30A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
IRFR13N20-VB Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single channel N-type MOSFET
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 55mΩ (at VGS=10V)
- **Continuous drain current (ID)**: 30A
- **Technology**: Trench
- **Maximum power consumption**: Depends on thermal design and working environment
- **Thermal resistance**: Depends on package and thermal configuration
- **Package type**: TO252
- **Configuration**: Single channel N-type MOSFET
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 55mΩ (at VGS=10V)
- **Continuous drain current (ID)**: 30A
- **Technology**: Trench
- **Maximum power consumption**: Depends on thermal design and working environment
- **Thermal resistance**: Depends on package and thermal configuration
Domain and module applications：
Applicable fields and modules
The design features of IRFR13N20-VB make it suitable for multiple fields and modules. The specific applications are as follows:
1. **Motor drive**: In motor control systems, IRFR13N20-VB can effectively drive medium to high power motors, especially DC motors. Its 200V withstand voltage and 30A current capability make it suitable for handling high current loads, stable operation and high efficiency.
2. **Switching power supply**: In switching power supply design, the low on-resistance (RDS(ON)) of this MOSFET helps reduce power loss and improve power conversion efficiency. It is suitable for DC-DC converters and other circuits that require high-efficiency power conversion.
3. **Power switch**: As a power switch, this device can be used in a variety of load switching applications, including industrial control systems and household appliances. Its high withstand voltage and low on-resistance enable it to handle higher power loads, ensuring the reliability and efficiency of switching operations.
4. **Battery Management System**: In the battery management system, IRFR13N20-VB can be used to control the switching operation of the battery to protect the battery from overcurrent or overvoltage. Its stable switching performance and low on-resistance help improve the overall efficiency and reliability of the battery management system.
5. **Inverter**: In solar inverters and other inverter applications, the high withstand voltage and low on-resistance of this MOSFET enable it to efficiently convert power. Suitable for medium to high power inverter design, it helps to improve the conversion efficiency and stability of the system.
IRFR13N20-VB's high withstand voltage, low on-resistance and Trench technology enable it to perform well in applications such as motor drives, switching power supplies, power switches and inverters, and can meet the needs of high efficiency and reliability in different application fields.
The design features of IRFR13N20-VB make it suitable for multiple fields and modules. The specific applications are as follows:
1. **Motor drive**: In motor control systems, IRFR13N20-VB can effectively drive medium to high power motors, especially DC motors. Its 200V withstand voltage and 30A current capability make it suitable for handling high current loads, stable operation and high efficiency.
2. **Switching power supply**: In switching power supply design, the low on-resistance (RDS(ON)) of this MOSFET helps reduce power loss and improve power conversion efficiency. It is suitable for DC-DC converters and other circuits that require high-efficiency power conversion.
3. **Power switch**: As a power switch, this device can be used in a variety of load switching applications, including industrial control systems and household appliances. Its high withstand voltage and low on-resistance enable it to handle higher power loads, ensuring the reliability and efficiency of switching operations.
4. **Battery Management System**: In the battery management system, IRFR13N20-VB can be used to control the switching operation of the battery to protect the battery from overcurrent or overvoltage. Its stable switching performance and low on-resistance help improve the overall efficiency and reliability of the battery management system.
5. **Inverter**: In solar inverters and other inverter applications, the high withstand voltage and low on-resistance of this MOSFET enable it to efficiently convert power. Suitable for medium to high power inverter design, it helps to improve the conversion efficiency and stability of the system.
IRFR13N20-VB's high withstand voltage, low on-resistance and Trench technology enable it to perform well in applications such as motor drives, switching power supplies, power switches and inverters, and can meet the needs of high efficiency and reliability in different application fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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