中文
English
IRFR13N20DTRPBF-VB Product details
Back to previous pageProduct introduction：
1. IRFR13N20DTRPBF-VB Product Introduction
IRFR13N20DTRPBF-VB is a high-performance N-channel MOSFET that uses advanced Trench technology and is packaged in a TO252 housing. This MOSFET provides a drain-source voltage (VDS) of 200V, a gate-source voltage (VGS) range of ±20V, and a turn-on voltage of 3V. Its on-resistance (RDS(ON)) is 55mΩ at a VGS of 10V, and its maximum drain current (ID) is 30A. The device is designed to provide efficient switching performance and good thermal stability, and is suitable for a variety of high-voltage and high-current application scenarios.
IRFR13N20DTRPBF-VB is a high-performance N-channel MOSFET that uses advanced Trench technology and is packaged in a TO252 housing. This MOSFET provides a drain-source voltage (VDS) of 200V, a gate-source voltage (VGS) range of ±20V, and a turn-on voltage of 3V. Its on-resistance (RDS(ON)) is 55mΩ at a VGS of 10V, and its maximum drain current (ID) is 30A. The device is designed to provide efficient switching performance and good thermal stability, and is suitable for a variety of high-voltage and high-current application scenarios.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 30A | 55mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 30A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 30A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. IRFR13N20DTRPBF-VB Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Throw-on voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 55mΩ @ VGS = 10V
- **Drain current (ID)**: 30A
- **Maximum power dissipation (Ptot)**: 94W
- **Operating temperature range**: -55°C to 175°C
- **Switching time**: Fast switching characteristics, suitable for high frequency applications
- **Technology**: Trench technology
- **Input capacitance (Ciss)**: 3.2nF
- **Output capacitance (Coss)**: 2.5nF
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Throw-on voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 55mΩ @ VGS = 10V
- **Drain current (ID)**: 30A
- **Maximum power dissipation (Ptot)**: 94W
- **Operating temperature range**: -55°C to 175°C
- **Switching time**: Fast switching characteristics, suitable for high frequency applications
- **Technology**: Trench technology
- **Input capacitance (Ciss)**: 3.2nF
- **Output capacitance (Coss)**: 2.5nF
Domain and module applications：
3. Application fields and module examples
The characteristics of IRFR13N20DTRPBF-VB make it widely used in the following fields and modules:
1. **Power management**: In power management applications, such as high-voltage DC-DC converters and switching power supplies, this MOSFET can handle high voltages of 200V and provide stable switching performance. Its low on-resistance and high drain current capability ensure efficient energy conversion and good system performance.
2. **Motor drive**: Suitable for motor drive circuits, especially in scenarios requiring high voltage and high current. Its 30A drain current capability and 200V withstand voltage can effectively control the start-up and operation of the motor and improve the efficiency and reliability of the motor system.
3. **Industrial automation**: In industrial automation systems, IRFR13N20DTRPBF-VB can be used in various high-voltage switching applications. Its high withstand voltage and excellent switching performance enable it to work stably in harsh industrial environments, and is used for power switches, load switches, and protection circuits.
4. **High-voltage lighting**: This MOSFET can provide stable switching performance and high-voltage protection in high-voltage lighting applications, such as high-voltage xenon lamps or other high-voltage lighting systems. Its low on-resistance helps reduce energy losses and improve the overall efficiency of the lighting system.
5. **Inverter**: In solar inverters and other types of power inverters, IRFR13N20DTRPBF-VB can be used for switching control of high-voltage circuits. Its high withstand voltage and good switching characteristics ensure the stability and reliability of the inverter under high-voltage operation.
The high voltage capability, low on-resistance, and fast switching characteristics of IRFR13N20DTRPBF-VB make it excellent in power management, motor drive, industrial automation, and high-voltage lighting, and can meet the needs of various high-voltage and high-current applications.
The characteristics of IRFR13N20DTRPBF-VB make it widely used in the following fields and modules:
1. **Power management**: In power management applications, such as high-voltage DC-DC converters and switching power supplies, this MOSFET can handle high voltages of 200V and provide stable switching performance. Its low on-resistance and high drain current capability ensure efficient energy conversion and good system performance.
2. **Motor drive**: Suitable for motor drive circuits, especially in scenarios requiring high voltage and high current. Its 30A drain current capability and 200V withstand voltage can effectively control the start-up and operation of the motor and improve the efficiency and reliability of the motor system.
3. **Industrial automation**: In industrial automation systems, IRFR13N20DTRPBF-VB can be used in various high-voltage switching applications. Its high withstand voltage and excellent switching performance enable it to work stably in harsh industrial environments, and is used for power switches, load switches, and protection circuits.
4. **High-voltage lighting**: This MOSFET can provide stable switching performance and high-voltage protection in high-voltage lighting applications, such as high-voltage xenon lamps or other high-voltage lighting systems. Its low on-resistance helps reduce energy losses and improve the overall efficiency of the lighting system.
5. **Inverter**: In solar inverters and other types of power inverters, IRFR13N20DTRPBF-VB can be used for switching control of high-voltage circuits. Its high withstand voltage and good switching characteristics ensure the stability and reliability of the inverter under high-voltage operation.
The high voltage capability, low on-resistance, and fast switching characteristics of IRFR13N20DTRPBF-VB make it excellent in power management, motor drive, industrial automation, and high-voltage lighting, and can meet the needs of various high-voltage and high-current applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
