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IRFR130A-VB Product details
Back to previous pageProduct introduction：
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IRFR130A-VB is a single N-channel MOSFET in TO252 package. It is designed for medium and high voltage applications with a drain-source voltage (VDS) up to 100V and a maximum drain current (ID) of 15A. This MOSFET uses Trench technology with a gate-source voltage (VGS) range of ±20V and a turn-on voltage (Vth) of 1.8V. At VGS=10V, its on-resistance (RDS(ON)) is 114mΩ. IRFR130A-VB provides good switching performance and low conduction losses, and is suitable for a variety of medium current and voltage electronic applications.
**
IRFR130A-VB is a single N-channel MOSFET in TO252 package. It is designed for medium and high voltage applications with a drain-source voltage (VDS) up to 100V and a maximum drain current (ID) of 15A. This MOSFET uses Trench technology with a gate-source voltage (VGS) range of ±20V and a turn-on voltage (Vth) of 1.8V. At VGS=10V, its on-resistance (RDS(ON)) is 114mΩ. IRFR130A-VB provides good switching performance and low conduction losses, and is suitable for a variety of medium current and voltage electronic applications.
**
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | 114mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
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- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Throw-through voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 114mΩ @ VGS=10V
- **Maximum drain current (ID)**: 15A
- **Technology**: Trench
- **Power consumption**: 50W
- **Maximum operating temperature**: 175°C
**
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Throw-through voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 114mΩ @ VGS=10V
- **Maximum drain current (ID)**: 15A
- **Technology**: Trench
- **Power consumption**: 50W
- **Maximum operating temperature**: 175°C
**
Domain and module applications：
**
1. **Power Management**: The IRFR130A-VB is suitable for power management modules such as DC-DC converters and power switches. Its low on-resistance and high current carrying capacity enable it to efficiently perform power conversion and current regulation, improving the overall efficiency of the power system.
2. **Automotive Electronics**: In automotive electronic devices such as motor drives and battery management systems, the medium current and high withstand voltage characteristics of the IRFR130A-VB make it a reliable power switching element to help manage the power needs of electric vehicles and protect battery systems.
3. **Industrial Control**: This MOSFET is suitable for switching circuits in industrial control systems, such as motor control and load switches. Its good switching characteristics and high voltage resistance help maintain stability and reliability in harsh industrial environments.
4. **Consumer Electronics**: The IRFR130A-VB can also be used for power switches in consumer electronics, such as chargers and small home appliances. Its efficient power management and low on-resistance can improve the performance and energy efficiency of the device.
These applications demonstrate the versatility of the IRFR130A-VB in high voltage and medium current scenarios, meeting a variety of electronic and power management needs.
1. **Power Management**: The IRFR130A-VB is suitable for power management modules such as DC-DC converters and power switches. Its low on-resistance and high current carrying capacity enable it to efficiently perform power conversion and current regulation, improving the overall efficiency of the power system.
2. **Automotive Electronics**: In automotive electronic devices such as motor drives and battery management systems, the medium current and high withstand voltage characteristics of the IRFR130A-VB make it a reliable power switching element to help manage the power needs of electric vehicles and protect battery systems.
3. **Industrial Control**: This MOSFET is suitable for switching circuits in industrial control systems, such as motor control and load switches. Its good switching characteristics and high voltage resistance help maintain stability and reliability in harsh industrial environments.
4. **Consumer Electronics**: The IRFR130A-VB can also be used for power switches in consumer electronics, such as chargers and small home appliances. Its efficient power management and low on-resistance can improve the performance and energy efficiency of the device.
These applications demonstrate the versatility of the IRFR130A-VB in high voltage and medium current scenarios, meeting a variety of electronic and power management needs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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