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IRFR122-VB Product details
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Product Introduction
IRFR122-VB is a high voltage N-channel MOSFET in TO252 package. Its drain-source voltage (VDS) can reach 200V, suitable for medium and high voltage applications. This MOSFET is designed to handle high currents, with a drain current (ID) of up to 5A. Using Trench technology, IRFR122-VB has a relatively high on-resistance (RDS(ON) of 850mΩ@VGS=10V), but still provides reliable performance over its operating voltage and current range. The turn-on voltage (Vth) is 3V, allowing it to be effectively turned on at medium gate voltages, suitable for applications that require high voltage resistance and high current handling capabilities.
IRFR122-VB is a high voltage N-channel MOSFET in TO252 package. Its drain-source voltage (VDS) can reach 200V, suitable for medium and high voltage applications. This MOSFET is designed to handle high currents, with a drain current (ID) of up to 5A. Using Trench technology, IRFR122-VB has a relatively high on-resistance (RDS(ON) of 850mΩ@VGS=10V), but still provides reliable performance over its operating voltage and current range. The turn-on voltage (Vth) is 3V, allowing it to be effectively turned on at medium gate voltages, suitable for applications that require high voltage resistance and high current handling capabilities.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 5A | 850mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
1. **Device type**: N-channel MOSFET
2. **Package type**: TO252
3. **Drain-source voltage (VDS)**: 200V
4. **Gate-source voltage (VGS)**: ±20V
5. **Throw-on voltage (Vth)**: 3V
6. **On-resistance (RDS(ON))**:
- 850mΩ @ VGS=10V
7. **Drain current (ID)**: 5A
8. **Technology type**: Trench
9. **Operating temperature range**: -55°C to 150°C
1. **Device type**: N-channel MOSFET
2. **Package type**: TO252
3. **Drain-source voltage (VDS)**: 200V
4. **Gate-source voltage (VGS)**: ±20V
5. **Throw-on voltage (Vth)**: 3V
6. **On-resistance (RDS(ON))**:
- 850mΩ @ VGS=10V
7. **Drain current (ID)**: 5A
8. **Technology type**: Trench
9. **Operating temperature range**: -55°C to 150°C
Domain and module applications：
Application fields and module examples
The characteristics of IRFR122-VB make it suitable for multiple fields and applications:
1. **Power management and conversion**: In power management systems such as DC-DC converters and switch mode power supplies (SMPS), IRFR122-VB is able to handle high voltage and medium current switching needs. Although its on-resistance is relatively high, its high withstand voltage characteristics make it very useful in applications that need to handle voltages above 200V.
2. **Industrial control**: In industrial automation and control systems, IRFR122-VB can be used for high voltage switching and power control. Its ability to operate reliably at higher voltages makes it suitable for power management and protection circuits in industrial equipment.
3. **Electric vehicles and charging systems**: In battery management systems and charging modules for electric vehicles, this MOSFET can be used for high voltage current switching and protection. Its high withstand voltage characteristics help ensure safety and reliability during battery management and charging.
4. **Home appliances and consumer electronics**: In home appliances and some consumer electronics, IRFR122-VB can be used for power switches and control circuits. Although the on-resistance is high, its high withstand voltage characteristics make it suitable for switching and protection functions in high voltage applications.
In these application scenarios, IRFR122-VB can provide stable performance and high withstand voltage capabilities to meet the electrical needs of different fields.
The characteristics of IRFR122-VB make it suitable for multiple fields and applications:
1. **Power management and conversion**: In power management systems such as DC-DC converters and switch mode power supplies (SMPS), IRFR122-VB is able to handle high voltage and medium current switching needs. Although its on-resistance is relatively high, its high withstand voltage characteristics make it very useful in applications that need to handle voltages above 200V.
2. **Industrial control**: In industrial automation and control systems, IRFR122-VB can be used for high voltage switching and power control. Its ability to operate reliably at higher voltages makes it suitable for power management and protection circuits in industrial equipment.
3. **Electric vehicles and charging systems**: In battery management systems and charging modules for electric vehicles, this MOSFET can be used for high voltage current switching and protection. Its high withstand voltage characteristics help ensure safety and reliability during battery management and charging.
4. **Home appliances and consumer electronics**: In home appliances and some consumer electronics, IRFR122-VB can be used for power switches and control circuits. Although the on-resistance is high, its high withstand voltage characteristics make it suitable for switching and protection functions in high voltage applications.
In these application scenarios, IRFR122-VB can provide stable performance and high withstand voltage capabilities to meet the electrical needs of different fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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