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IRFR120ZTRPBF-VB Product details

Product introduction:

IRFR120ZTRPBF-VB Product Introduction
IRFR120ZTRPBF-VB is a high-efficiency single-channel N-type MOSFET in TO252 package. This MOSFET is designed to handle medium voltage applications, with a drain-source voltage (VDS) of up to 100V and a gate-source voltage (VGS) of up to ±20V. The threshold voltage is 1.8V, the on-resistance (RDS(ON)) is 114mΩ at VGS=10V, and it can provide a maximum continuous drain current of 15A. It uses Trench technology, which can achieve low on-resistance and high switching efficiency, making it perform well in multiple applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 100V 1.8V 15A 114mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 100V 1.8V 15A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 100V 1.8V 15A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
IRFR120ZTRPBF-VB Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single channel N-type MOSFET
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 114mΩ (at VGS=10V)
- **Continuous drain current (ID)**: 15A
- **Technology**: Trench
- **Maximum power consumption**: Depends on thermal design and operating environment
- **Thermal resistance**: Depends on package and thermal configuration

Domain and module applications:

Applicable fields and modules
The design and performance of IRFR120ZTRPBF-VB make it suitable for multiple fields and modules, including but not limited to:

1. **Motor drive**: This MOSFET can be used in medium-sized motor control systems, especially for DC motor drive applications. Its 15A drain current capability and 100V withstand voltage make it perform well in motor control, capable of handling large current loads and providing stable switching performance.

2. **Switching power supply**: In switching power supply design, IRFR120ZTRPBF-VB can efficiently handle power conversion. Its low on-resistance (RDS(ON)) helps reduce energy loss, thereby improving the efficiency of the entire power converter, and is suitable for DC-DC converters and other power modules.

3. **Load switch**: As a load switch, IRFR120ZTRPBF-VB can reliably switch various loads, especially in industrial control systems, and can effectively handle medium voltage and current loads to ensure system stability and high efficiency.

4. **Battery Management System**: In a battery management system, the IRFR120ZTRPBF-VB can be used to manage the battery’s switch control and protection functions. Its low on-resistance helps optimize power loss, improve battery management efficiency and overall system performance.

5. **LED Driver**: This MOSFET is also suitable for use in LED driver circuits, especially where stable current and efficient switch control are required. Its low on-resistance and high current capability make it an ideal choice for LED driver applications, providing a stable light source output and improving the system’s energy efficiency.

The IRFR120ZTRPBF-VB’s medium voltage handling capability, low on-resistance, and high switching efficiency make it an ideal choice in a variety of fields, including power management, motor drive, and load switching.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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