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IRFR120TRPBF-VB Product details
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Product Introduction
IRFR120TRPBF-VB is a high-efficiency N-channel MOSFET in TO252 package, suitable for medium voltage switching applications. Its drain-source voltage (VDS) is 100V, the maximum gate-source voltage (VGS) is ±20V, and the turn-on threshold voltage (Vth) is 1.8V. The on-resistance (RDS(ON)) of this MOSFET is 114mΩ@VGS=10V, and the maximum drain current (ID) can reach 15A. It is designed with advanced Trench technology, which makes it have low on-resistance and excellent switching performance, especially suitable for efficient power management and medium current load switching applications.
IRFR120TRPBF-VB is a high-efficiency N-channel MOSFET in TO252 package, suitable for medium voltage switching applications. Its drain-source voltage (VDS) is 100V, the maximum gate-source voltage (VGS) is ±20V, and the turn-on threshold voltage (Vth) is 1.8V. The on-resistance (RDS(ON)) of this MOSFET is 114mΩ@VGS=10V, and the maximum drain current (ID) can reach 15A. It is designed with advanced Trench technology, which makes it have low on-resistance and excellent switching performance, especially suitable for efficient power management and medium current load switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | 114mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package**: TO252
- **Polarity**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 114mΩ @ VGS=10V
- **Maximum drain current (ID)**: 15A
- **Power consumption (Ptot)**: 40W
- **Operating temperature range**: -55°C to +150°C
- **Technology**: Trench
- **Package**: TO252
- **Polarity**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 114mΩ @ VGS=10V
- **Maximum drain current (ID)**: 15A
- **Power consumption (Ptot)**: 40W
- **Operating temperature range**: -55°C to +150°C
- **Technology**: Trench
Domain and module applications：
Applications and module examples
1. **DC-DC converter**: The low on-resistance and high drain-source voltage characteristics of IRFR120TRPBF-VB make it widely used in high-efficiency DC-DC converters. It can perform power conversion in a high-efficiency state, and is particularly suitable for voltage regulation modules in industrial power supplies and communication equipment to improve the overall efficiency of the system.
2. **Motor control**: In small motor control applications, especially medium voltage and current motor drives such as brushless DC motors and stepper motor drives, IRFR120TRPBF-VB can provide precise current control to help reduce switching losses, thereby improving the efficiency and reliability of the motor system.
3. **Load switch**: This MOSFET is suitable for medium power load switches, such as switching power supplies and industrial automation systems. The low on-resistance of IRFR120TRPBF-VB can reduce power losses during load switching, ensuring longer service life and higher system stability.
4. **Battery Management System**: In battery management and protection systems, such as battery protection modules for portable devices, the IRFR120TRPBF-VB can be used to control battery charging and discharging. Its fast switching speed and low on-resistance can improve charging efficiency and prevent overcharging or over-discharging, improving battery safety and performance.
The IRFR120TRPBF-VB is suitable for a variety of medium-power applications, especially in DC-DC converters, motor drives, load switches, and battery management systems, providing efficient switching solutions and low-power operation.
1. **DC-DC converter**: The low on-resistance and high drain-source voltage characteristics of IRFR120TRPBF-VB make it widely used in high-efficiency DC-DC converters. It can perform power conversion in a high-efficiency state, and is particularly suitable for voltage regulation modules in industrial power supplies and communication equipment to improve the overall efficiency of the system.
2. **Motor control**: In small motor control applications, especially medium voltage and current motor drives such as brushless DC motors and stepper motor drives, IRFR120TRPBF-VB can provide precise current control to help reduce switching losses, thereby improving the efficiency and reliability of the motor system.
3. **Load switch**: This MOSFET is suitable for medium power load switches, such as switching power supplies and industrial automation systems. The low on-resistance of IRFR120TRPBF-VB can reduce power losses during load switching, ensuring longer service life and higher system stability.
4. **Battery Management System**: In battery management and protection systems, such as battery protection modules for portable devices, the IRFR120TRPBF-VB can be used to control battery charging and discharging. Its fast switching speed and low on-resistance can improve charging efficiency and prevent overcharging or over-discharging, improving battery safety and performance.
The IRFR120TRPBF-VB is suitable for a variety of medium-power applications, especially in DC-DC converters, motor drives, load switches, and battery management systems, providing efficient switching solutions and low-power operation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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