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IRFR120ATM-VB Product details
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Product Introduction
IRFR120ATM-VB is a high-performance N-channel MOSFET in TO252 package, designed for medium voltage and medium current applications. This MOSFET supports a drain-source voltage (VDS) of up to 100V and can handle a drain current (ID) of up to 15A. IRFR120ATM-VB uses Trench technology and has relatively low on-resistance and good switching performance. At VGS=10V, its on-resistance (RDS(ON)) is 114mΩ, which can effectively reduce power loss and improve system efficiency. Its typical turn-on voltage (Vth) is 1.8V, and it can be reliably turned on at a lower gate-source voltage.
IRFR120ATM-VB is a high-performance N-channel MOSFET in TO252 package, designed for medium voltage and medium current applications. This MOSFET supports a drain-source voltage (VDS) of up to 100V and can handle a drain current (ID) of up to 15A. IRFR120ATM-VB uses Trench technology and has relatively low on-resistance and good switching performance. At VGS=10V, its on-resistance (RDS(ON)) is 114mΩ, which can effectively reduce power loss and improve system efficiency. Its typical turn-on voltage (Vth) is 1.8V, and it can be reliably turned on at a lower gate-source voltage.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | 114mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
1. **Device type**: N-channel MOSFET
2. **Package type**: TO252
3. **Drain-source voltage (VDS)**: 100V
4. **Gate-source voltage (VGS)**: ±20V
5. **Throw-on voltage (Vth)**: 1.8V
6. **On-resistance (RDS(ON))**:
- 114mΩ @ VGS=10V
7. **Drain current (ID)**: 15A
8. **Technology type**: Trench
9. **Operating temperature range**: -55°C to 150°C
1. **Device type**: N-channel MOSFET
2. **Package type**: TO252
3. **Drain-source voltage (VDS)**: 100V
4. **Gate-source voltage (VGS)**: ±20V
5. **Throw-on voltage (Vth)**: 1.8V
6. **On-resistance (RDS(ON))**:
- 114mΩ @ VGS=10V
7. **Drain current (ID)**: 15A
8. **Technology type**: Trench
9. **Operating temperature range**: -55°C to 150°C
Domain and module applications：
Applicable fields and module examples
The characteristics of IRFR120ATM-VB make it suitable for multiple fields and applications:
1. **Power management and switching circuits**: In various power management applications, such as DC-DC converters and switching power supplies (SMPS), IRFR120ATM-VB can be used for load switching and power conversion. Its moderate on-resistance and high current capability help improve the overall efficiency of the system, reduce power loss, and improve power conversion performance.
2. **Industrial automation**: In industrial automation systems, such as motor drives and automation control modules, this MOSFET can be used for efficient power switching and control. It can reliably handle medium voltage and current loads, ensuring system stability and high efficiency.
3. **Electric vehicles and charging systems**: In chargers and battery management systems for electric vehicles, IRFR120ATM-VB can be used for efficient current switching to support the charging and discharging process of the battery. Its low on-resistance can effectively reduce power loss during charging and improve charging efficiency.
4. **Consumer Electronics**: In consumer electronics, such as laptops, TVs, and power tools, the IRFR120ATM-VB can be used for power switches and battery management systems. Its high current handling capability and low power consumption make it suitable for power control of various devices, improving the performance and life of the devices.
The characteristics of IRFR120ATM-VB make it suitable for multiple fields and applications:
1. **Power management and switching circuits**: In various power management applications, such as DC-DC converters and switching power supplies (SMPS), IRFR120ATM-VB can be used for load switching and power conversion. Its moderate on-resistance and high current capability help improve the overall efficiency of the system, reduce power loss, and improve power conversion performance.
2. **Industrial automation**: In industrial automation systems, such as motor drives and automation control modules, this MOSFET can be used for efficient power switching and control. It can reliably handle medium voltage and current loads, ensuring system stability and high efficiency.
3. **Electric vehicles and charging systems**: In chargers and battery management systems for electric vehicles, IRFR120ATM-VB can be used for efficient current switching to support the charging and discharging process of the battery. Its low on-resistance can effectively reduce power loss during charging and improve charging efficiency.
4. **Consumer Electronics**: In consumer electronics, such as laptops, TVs, and power tools, the IRFR120ATM-VB can be used for power switches and battery management systems. Its high current handling capability and low power consumption make it suitable for power control of various devices, improving the performance and life of the devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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