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IRFR110ATF-VB Product details
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Product Introduction
IRFR110ATF-VB is a high-performance N-channel MOSFET in TO252 package, designed for medium voltage and power switching applications. It can withstand drain-source voltage (VDS) up to 100V and gate-source voltage (VGS) of ±20V. The MOSFET has a turn-on threshold voltage (Vth) of 1.8V, an on-resistance (RDS(ON)) of 114mΩ@VGS=10V, and a maximum continuous drain current (ID) of 15A. IRFR110ATF-VB uses Trench technology to provide excellent switching performance and low on-resistance, making it ideal for medium power applications.
IRFR110ATF-VB is a high-performance N-channel MOSFET in TO252 package, designed for medium voltage and power switching applications. It can withstand drain-source voltage (VDS) up to 100V and gate-source voltage (VGS) of ±20V. The MOSFET has a turn-on threshold voltage (Vth) of 1.8V, an on-resistance (RDS(ON)) of 114mΩ@VGS=10V, and a maximum continuous drain current (ID) of 15A. IRFR110ATF-VB uses Trench technology to provide excellent switching performance and low on-resistance, making it ideal for medium power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | 114mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package**: TO252
- **Polarity**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 114mΩ @ VGS=10V
- **Maximum drain current (ID)**: 15A
- **Power consumption (Ptot)**: 40W
- **Operating temperature range**: -55°C to +150°C
- **Technology**: Trench
- **Package**: TO252
- **Polarity**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 114mΩ @ VGS=10V
- **Maximum drain current (ID)**: 15A
- **Power consumption (Ptot)**: 40W
- **Operating temperature range**: -55°C to +150°C
- **Technology**: Trench
Domain and module applications：
Application fields and module examples
1. **DC-DC converter**: The low on-resistance and moderate drain-source voltage of IRFR110ATF-VB make it suitable for DC-DC converter modules. It can switch efficiently at medium voltage and current, thereby improving power conversion efficiency and reducing power loss.
2. **Motor control**: In motor drive applications, such as stepper motor or small brushless DC motor control, IRFR110ATF-VB can provide reliable switching performance and control accuracy. Its high switching speed and low on-resistance help improve the stability and efficiency of motor control.
3. **Load switch**: This MOSFET is suitable for load switching applications, such as switching power supplies and automation control systems. In these applications, the low on-resistance of IRFR110ATF-VB can reduce power loss and optimize the performance of load switches.
4. **Battery Management System**: In portable devices and small battery management systems, IRFR110ATF-VB can be used as a battery protection switch to control the battery charging and discharging process. Its excellent switching characteristics and low on-resistance help improve battery performance and safety.
The low on-resistance and medium voltage capability of IRFR110ATF-VB make it excellent in a variety of medium power applications, especially in DC-DC converters, motor control and load switch systems, providing efficient and reliable switching solutions.
1. **DC-DC converter**: The low on-resistance and moderate drain-source voltage of IRFR110ATF-VB make it suitable for DC-DC converter modules. It can switch efficiently at medium voltage and current, thereby improving power conversion efficiency and reducing power loss.
2. **Motor control**: In motor drive applications, such as stepper motor or small brushless DC motor control, IRFR110ATF-VB can provide reliable switching performance and control accuracy. Its high switching speed and low on-resistance help improve the stability and efficiency of motor control.
3. **Load switch**: This MOSFET is suitable for load switching applications, such as switching power supplies and automation control systems. In these applications, the low on-resistance of IRFR110ATF-VB can reduce power loss and optimize the performance of load switches.
4. **Battery Management System**: In portable devices and small battery management systems, IRFR110ATF-VB can be used as a battery protection switch to control the battery charging and discharging process. Its excellent switching characteristics and low on-resistance help improve battery performance and safety.
The low on-resistance and medium voltage capability of IRFR110ATF-VB make it excellent in a variety of medium power applications, especially in DC-DC converters, motor control and load switch systems, providing efficient and reliable switching solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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