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IRFR1010ZTRLPBF-VB Product details
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IRFR1010ZTRLPBF-VB is a high-performance, single N-channel MOSFET in TO252 package. With a drain-source voltage (VDS) of up to 60V and a maximum drain current (ID) of 97A, this MOSFET is designed to handle high current and medium voltage applications. Its gate-source voltage (VGS) range is ±20V and its turn-on voltage (Vth) is 3V. IRFR1010ZTRLPBF-VB uses Trench technology and has an extremely low on-resistance (RDS(ON)) of 4.5mΩ at VGS=10V and 12mΩ at VGS=4.5V. Its excellent conduction performance and high current carrying capability enable it to perform well in a variety of applications requiring high current and high switching speed.
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IRFR1010ZTRLPBF-VB is a high-performance, single N-channel MOSFET in TO252 package. With a drain-source voltage (VDS) of up to 60V and a maximum drain current (ID) of 97A, this MOSFET is designed to handle high current and medium voltage applications. Its gate-source voltage (VGS) range is ±20V and its turn-on voltage (Vth) is 3V. IRFR1010ZTRLPBF-VB uses Trench technology and has an extremely low on-resistance (RDS(ON)) of 4.5mΩ at VGS=10V and 12mΩ at VGS=4.5V. Its excellent conduction performance and high current carrying capability enable it to perform well in a variety of applications requiring high current and high switching speed.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 3V | 97A | 4.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 3V | 97A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 3V | 97A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
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- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Throw-on voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 12mΩ @ VGS=4.5V
- 4.5mΩ @ VGS=10V
- **Maximum drain current (ID)**: 97A
- **Technology**: Trench
- **Power consumption**: 85W
- **Maximum operating temperature**: 175°C
**
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Throw-on voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 12mΩ @ VGS=4.5V
- 4.5mΩ @ VGS=10V
- **Maximum drain current (ID)**: 97A
- **Technology**: Trench
- **Power consumption**: 85W
- **Maximum operating temperature**: 175°C
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Domain and module applications：
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1. **High-efficiency power switch**: IRFR1010ZTRLPBF-VB is ideal for high-efficiency power switch applications such as DC-DC converters and power management modules. Its low on-resistance and high current capability enable it to maintain low power consumption and high efficiency under high load conditions, making it suitable for power supply designs that require high efficiency.
2. **Electric vehicles**: In electric vehicles, this MOSFET can be used for motor drives and battery management systems. Its high current capability and low on-resistance ensure efficient operation of motor drives and stable management of batteries, making it suitable for electric vehicle power systems and charging management.
3. **Power protection circuit**: IRFR1010ZTRLPBF-VB is suitable for power protection circuits such as overcurrent protection and overvoltage protection. Its high current carrying capacity and low on-resistance can effectively protect the circuit from damage caused by overcurrent and overvoltage, ensuring the stability and safety of the system.
4. **High power switching applications**: This MOSFET is also suitable for high power switching applications, such as power amplifiers and high power load switches. Its high current and low on-resistance enable it to handle high power switching tasks, ensuring stability and efficiency in high power applications.
1. **High-efficiency power switch**: IRFR1010ZTRLPBF-VB is ideal for high-efficiency power switch applications such as DC-DC converters and power management modules. Its low on-resistance and high current capability enable it to maintain low power consumption and high efficiency under high load conditions, making it suitable for power supply designs that require high efficiency.
2. **Electric vehicles**: In electric vehicles, this MOSFET can be used for motor drives and battery management systems. Its high current capability and low on-resistance ensure efficient operation of motor drives and stable management of batteries, making it suitable for electric vehicle power systems and charging management.
3. **Power protection circuit**: IRFR1010ZTRLPBF-VB is suitable for power protection circuits such as overcurrent protection and overvoltage protection. Its high current carrying capacity and low on-resistance can effectively protect the circuit from damage caused by overcurrent and overvoltage, ensuring the stability and safety of the system.
4. **High power switching applications**: This MOSFET is also suitable for high power switching applications, such as power amplifiers and high power load switches. Its high current and low on-resistance enable it to handle high power switching tasks, ensuring stability and efficiency in high power applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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