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IRFR1010E-VB Product details
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IRFR1010E-VB MOSFET Product Introduction:
IRFR1010E-VB is a high-performance single N-channel MOSFET in TO252 package and manufactured based on Trench technology. With a drain-source voltage (VDS) of 60V and a drain current (ID) of 97A, this MOSFET is ideal for high current and medium voltage applications. Its threshold voltage (Vth) is 3V, and its on-resistance (RDS(ON)) is 12mΩ at VGS=4.5V, which drops to 4.5mΩ at VGS=10V. The low on-resistance and high current capability of the IRFR1010E-VB enable it to excel in switching applications requiring high power density and high efficiency, and is suitable for a variety of applications requiring efficient current control.
IRFR1010E-VB is a high-performance single N-channel MOSFET in TO252 package and manufactured based on Trench technology. With a drain-source voltage (VDS) of 60V and a drain current (ID) of 97A, this MOSFET is ideal for high current and medium voltage applications. Its threshold voltage (Vth) is 3V, and its on-resistance (RDS(ON)) is 12mΩ at VGS=4.5V, which drops to 4.5mΩ at VGS=10V. The low on-resistance and high current capability of the IRFR1010E-VB enable it to excel in switching applications requiring high power density and high efficiency, and is suitable for a variety of applications requiring efficient current control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 3V | 97A | 4.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 3V | 97A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 3V | 97A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
IRFR1010E-VB Detailed parameter description:
- **Model**: IRFR1010E-VB
- **Package**: TO252
- **MOSFET configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 12mΩ@VGS=4.5V
- 4.5mΩ@VGS=10V
- **Maximum drain current (ID)**: 97A
- **Technology**: Trench technology
- **Operating temperature range**: Typically between -55°C to +150°C
- **Model**: IRFR1010E-VB
- **Package**: TO252
- **MOSFET configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 12mΩ@VGS=4.5V
- 4.5mΩ@VGS=10V
- **Maximum drain current (ID)**: 97A
- **Technology**: Trench technology
- **Operating temperature range**: Typically between -55°C to +150°C
Domain and module applications：
Applications and modules:
1. **High-efficiency DC-DC converters**: The low on-resistance and high current handling capability of the IRFR1010E-VB make it ideal for use in high-efficiency DC-DC converters. In these converters, it is able to provide efficient switching performance and low power losses, thereby improving the overall efficiency and performance of the converter.
2. **Motor drive systems**: In electric vehicles, power tools, and industrial motor drive systems, the IRFR1010E-VB is able to handle high current loads and operate at low on-resistance. Its high current capability and low heat loss ensure efficient operation and reliability of motor drive systems.
3. **High-power switching power supply**: This MOSFET is suitable for switching power supply modules that require high power and high current control. The IRFR1010E-VB is able to stably switch under high current loads, effectively manage power and reduce heat, thereby improving the efficiency and stability of the power supply.
4. **LED Driver**: In high-power LED lighting systems, IRFR1010E-VB can be used to drive high current control of LEDs. Its low on-resistance and high current capability are suitable for LED drivers to ensure stable brightness and long life of LEDs.
With its high current handling capability and low on-resistance, IRFR1010E-VB is widely used in high-efficiency DC-DC converters, motor drive systems, high-power switching power supplies and LED drivers, providing excellent switching performance and high-efficiency current control.
1. **High-efficiency DC-DC converters**: The low on-resistance and high current handling capability of the IRFR1010E-VB make it ideal for use in high-efficiency DC-DC converters. In these converters, it is able to provide efficient switching performance and low power losses, thereby improving the overall efficiency and performance of the converter.
2. **Motor drive systems**: In electric vehicles, power tools, and industrial motor drive systems, the IRFR1010E-VB is able to handle high current loads and operate at low on-resistance. Its high current capability and low heat loss ensure efficient operation and reliability of motor drive systems.
3. **High-power switching power supply**: This MOSFET is suitable for switching power supply modules that require high power and high current control. The IRFR1010E-VB is able to stably switch under high current loads, effectively manage power and reduce heat, thereby improving the efficiency and stability of the power supply.
4. **LED Driver**: In high-power LED lighting systems, IRFR1010E-VB can be used to drive high current control of LEDs. Its low on-resistance and high current capability are suitable for LED drivers to ensure stable brightness and long life of LEDs.
With its high current handling capability and low on-resistance, IRFR1010E-VB is widely used in high-efficiency DC-DC converters, motor drive systems, high-power switching power supplies and LED drivers, providing excellent switching performance and high-efficiency current control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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