IRFR024ZTRPBF-VB Product details
Product introduction:
IRFR024ZTRPBF-VB is a single N-channel MOSFET in TO252 package, designed for medium voltage applications. Its drain-source voltage (VDS) is 60V, and the gate-source voltage (VGS) can withstand ±20V. The gate threshold voltage (Vth) of this MOSFET is 1.7V, providing efficient switching performance. Its on-resistance (RDS(ON)) is 85mΩ at VGS of 4.5V and 73mΩ at VGS of 10V, and its maximum current carrying capacity is 18A. IRFR024ZTRPBF-VB uses Trench technology, with low on-resistance and excellent switching characteristics, suitable for various power management and switching applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | 73mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Breakdown voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 85mΩ@VGS=4.5V
- 73mΩ@VGS=10V
- **Current (ID)**: 18A
- **Technology type**: Trench technology
- **Power consumption**: 40W (maximum power consumption depends on heat dissipation conditions)
- **Operating temperature range**: -55°C to +150°C
- **Maximum pulsed drain current**: 60A
- **Input capacitance (Ciss)**: 1200pF
- **Output capacitance (Coss)**: 200pF
- **Reverse recovery time (trr)**: 120ns
Domain and module applications:
1. **Power switch**
IRFR024ZTRPBF-VB is very suitable for use as a power switch, especially in DC-DC converters and power management modules. Its low on-resistance and high current carrying capacity enable it to effectively control the current flow in the power switch, improving conversion efficiency and system stability.
2. **Motor control**
In motor control systems, such as stepper motor drives and DC motor drives, IRFR024ZTRPBF-VB can be used as a switching element. Its high current handling capability and low RDS(ON) value help reduce power losses and improve the overall performance and reliability of the motor drive system.
3. **Power management circuit**
This MOSFET is also suitable for various power management circuits, such as power protection and power conversion applications. Its good switching characteristics and low on-resistance enable it to efficiently manage power transmission and protection circuits, ensuring system stability and efficiency.
4. **Consumer Electronics**
In consumer electronics, such as portable devices and home appliances, the TO252 package and high current capability of the IRFR024ZTRPBF-VB make it suitable for miniaturized current switching and control applications. It can provide reliable current control in space-constrained environments to ensure the normal operation of the equipment.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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