中文
English
IRFR024NTR-VB Product details
Back to previous pageProduct introduction：
IRFR024NTR-VB Product Introduction
IRFR024NTR-VB is a high-efficiency single-channel N-type MOSFET in TO252 package. This MOSFET is designed for low to medium voltage applications and can withstand drain-source voltage (VDS) up to 60V and gate-source voltage (VGS) of ±20V. Its threshold voltage (Vth) is 1.7V, and the on-resistance (RDS(ON)) is 85mΩ at VGS=4.5V and 73mΩ at VGS=10V. The MOSFET supports a continuous drain current of up to 18A. Using Trench technology, this technology provides low on-resistance and high switching efficiency, suitable for applications with high performance requirements.
IRFR024NTR-VB is a high-efficiency single-channel N-type MOSFET in TO252 package. This MOSFET is designed for low to medium voltage applications and can withstand drain-source voltage (VDS) up to 60V and gate-source voltage (VGS) of ±20V. Its threshold voltage (Vth) is 1.7V, and the on-resistance (RDS(ON)) is 85mΩ at VGS=4.5V and 73mΩ at VGS=10V. The MOSFET supports a continuous drain current of up to 18A. Using Trench technology, this technology provides low on-resistance and high switching efficiency, suitable for applications with high performance requirements.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | 73mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
IRFR024NTR-VB Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single-channel N-type MOSFET
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 85mΩ (at VGS=4.5V)
- 73mΩ (at VGS=10V)
- **Continuous drain current (ID)**: 18A
- **Technology**: Trench
- **Maximum power consumption**: Depends on the heat dissipation design and the actual working environment, and thermal management needs to be considered.
- **Thermal resistance**: Good heat dissipation design is essential for optimizing power consumption and heat dissipation performance.
- **Package type**: TO252
- **Configuration**: Single-channel N-type MOSFET
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 85mΩ (at VGS=4.5V)
- 73mΩ (at VGS=10V)
- **Continuous drain current (ID)**: 18A
- **Technology**: Trench
- **Maximum power consumption**: Depends on the heat dissipation design and the actual working environment, and thermal management needs to be considered.
- **Thermal resistance**: Good heat dissipation design is essential for optimizing power consumption and heat dissipation performance.
Domain and module applications：
Applicable fields and modules
The low on-resistance and high switching efficiency of IRFR024NTR-VB make it excel in multiple application fields, including:
1. **Switching power supply**: In switching power supply applications, IRFR024NTR-VB can effectively handle medium voltage and current, providing efficient power conversion. Its low RDS(ON) ensures low switching losses and heat generation, suitable for DC-DC converters and switching power supply modules.
2. **Motor drive**: This MOSFET can be used in motor drive systems, especially for motors requiring medium current. Its drain current capability of up to 18A makes it suitable for applications controlling small motors or stepper motors.
3. **Battery management**: In battery management systems, IRFR024NTR-VB can be used for battery protection and switch control. Its low on-resistance helps reduce power consumption and improve the efficiency and stability of battery management systems.
4. **LED driver**: In LED driver applications, the low RDS(ON) and high switching efficiency of IRFR024NTR-VB make it an ideal choice in LED driver circuits, ensuring high efficiency and long life of LEDs.
5. **Low power inverter**: In low power inverters, this MOSFET can handle medium voltage and current, providing stable power conversion. Its high switching efficiency and low on-resistance are suitable for various inverter designs, especially low to medium power applications.
The low on-resistance and high switching performance of IRFR024NTR-VB make it the preferred MOSFET in a variety of applications, especially in scenarios requiring medium voltage and high efficiency.
The low on-resistance and high switching efficiency of IRFR024NTR-VB make it excel in multiple application fields, including:
1. **Switching power supply**: In switching power supply applications, IRFR024NTR-VB can effectively handle medium voltage and current, providing efficient power conversion. Its low RDS(ON) ensures low switching losses and heat generation, suitable for DC-DC converters and switching power supply modules.
2. **Motor drive**: This MOSFET can be used in motor drive systems, especially for motors requiring medium current. Its drain current capability of up to 18A makes it suitable for applications controlling small motors or stepper motors.
3. **Battery management**: In battery management systems, IRFR024NTR-VB can be used for battery protection and switch control. Its low on-resistance helps reduce power consumption and improve the efficiency and stability of battery management systems.
4. **LED driver**: In LED driver applications, the low RDS(ON) and high switching efficiency of IRFR024NTR-VB make it an ideal choice in LED driver circuits, ensuring high efficiency and long life of LEDs.
5. **Low power inverter**: In low power inverters, this MOSFET can handle medium voltage and current, providing stable power conversion. Its high switching efficiency and low on-resistance are suitable for various inverter designs, especially low to medium power applications.
The low on-resistance and high switching performance of IRFR024NTR-VB make it the preferred MOSFET in a variety of applications, especially in scenarios requiring medium voltage and high efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
