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IRFR014NTRPBF-VB Product details
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IRFR014NTRPBF-VB is a high-performance single N-channel MOSFET in TO252 package. With a drain-source voltage (VDS) of up to 60V and a drain current (ID) of 18A, this MOSFET is suitable for applications handling medium voltage and current. Its gate-source voltage (VGS) range is ±20V and its turn-on voltage (Vth) is 1.7V. IRFR014NTRPBF-VB uses Trench technology and has an on-resistance (RDS(ON)) of 73mΩ at VGS=10V and 85mΩ at VGS=4.5V. This MOSFET has good switching performance and low on-resistance, making it excellent in a variety of medium-power applications.
**
IRFR014NTRPBF-VB is a high-performance single N-channel MOSFET in TO252 package. With a drain-source voltage (VDS) of up to 60V and a drain current (ID) of 18A, this MOSFET is suitable for applications handling medium voltage and current. Its gate-source voltage (VGS) range is ±20V and its turn-on voltage (Vth) is 1.7V. IRFR014NTRPBF-VB uses Trench technology and has an on-resistance (RDS(ON)) of 73mΩ at VGS=10V and 85mΩ at VGS=4.5V. This MOSFET has good switching performance and low on-resistance, making it excellent in a variety of medium-power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | 73mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
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- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Throw-through voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 85mΩ @ VGS=4.5V
- 73mΩ @ VGS=10V
- **Maximum drain current (ID)**: 18A
- **Technology**: Trench
- **Power consumption**: 31W
- **Maximum operating temperature**: 175°C
**
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Throw-through voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 85mΩ @ VGS=4.5V
- 73mΩ @ VGS=10V
- **Maximum drain current (ID)**: 18A
- **Technology**: Trench
- **Power consumption**: 31W
- **Maximum operating temperature**: 175°C
**
Domain and module applications：
**
1. **DC-DC Converter**: IRFR014NTRPBF-VB is suitable for various DC-DC converter modules. Its switching performance at 60V and low on-resistance provide efficient voltage conversion and current control, suitable for efficient power management systems.
2. **Battery Management System**: In battery management systems, this MOSFET can be used for battery protection and power switching. Its low on-resistance and high current capability ensure effective battery protection and current control, suitable for use in laptops, electric vehicles, and mobile devices.
3. **Motor Drive**: IRFR014NTRPBF-VB is also suitable for small motor drive applications such as home appliances and power tools. Its high current capability and low on-resistance provide stable motor control and efficient power conversion.
4. **Switching Power Supply**: This MOSFET can be used in switching power supply modules, especially in medium voltage and current applications. Its excellent switching performance and low on-resistance can improve the efficiency of the power supply and ensure system stability.
1. **DC-DC Converter**: IRFR014NTRPBF-VB is suitable for various DC-DC converter modules. Its switching performance at 60V and low on-resistance provide efficient voltage conversion and current control, suitable for efficient power management systems.
2. **Battery Management System**: In battery management systems, this MOSFET can be used for battery protection and power switching. Its low on-resistance and high current capability ensure effective battery protection and current control, suitable for use in laptops, electric vehicles, and mobile devices.
3. **Motor Drive**: IRFR014NTRPBF-VB is also suitable for small motor drive applications such as home appliances and power tools. Its high current capability and low on-resistance provide stable motor control and efficient power conversion.
4. **Switching Power Supply**: This MOSFET can be used in switching power supply modules, especially in medium voltage and current applications. Its excellent switching performance and low on-resistance can improve the efficiency of the power supply and ensure system stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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