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IRFR010TRPBF-VB Product details
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1. IRFR010TRPBF-VB Product Introduction
IRFR010TRPBF-VB is a single N-channel MOSFET in TO252 package with a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V. The gate threshold voltage (Vth) of this MOSFET is 1.7V, the on-resistance (RDS(ON)) is 85mΩ at VGS of 4.5V and 73mΩ at VGS of 10V, and the maximum current carrying capacity is 18A. Manufactured with Trench technology, IRFR010TRPBF-VB has low on-resistance and efficient switching performance, and is suitable for electronic applications requiring low voltage and high current.
IRFR010TRPBF-VB is a single N-channel MOSFET in TO252 package with a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V. The gate threshold voltage (Vth) of this MOSFET is 1.7V, the on-resistance (RDS(ON)) is 85mΩ at VGS of 4.5V and 73mΩ at VGS of 10V, and the maximum current carrying capacity is 18A. Manufactured with Trench technology, IRFR010TRPBF-VB has low on-resistance and efficient switching performance, and is suitable for electronic applications requiring low voltage and high current.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | 73mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. IRFR010TRPBF-VB detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Breakdown voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 85mΩ@VGS=4.5V
- 73mΩ@VGS=10V
- **Current (ID)**: 18A
- **Technology type**: Trench technology
- **Power consumption**: 40W (maximum power consumption depends on heat dissipation conditions)
- **Operating temperature range**: -55°C to +150°C
- **Maximum pulsed drain current**: 60A
- **Input capacitance (Ciss)**: 1200pF
- **Output capacitance (Coss)**: 200pF
- **Reverse recovery time (trr)**: 120ns
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Breakdown voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 85mΩ@VGS=4.5V
- 73mΩ@VGS=10V
- **Current (ID)**: 18A
- **Technology type**: Trench technology
- **Power consumption**: 40W (maximum power consumption depends on heat dissipation conditions)
- **Operating temperature range**: -55°C to +150°C
- **Maximum pulsed drain current**: 60A
- **Input capacitance (Ciss)**: 1200pF
- **Output capacitance (Coss)**: 200pF
- **Reverse recovery time (trr)**: 120ns
Domain and module applications：
III. Application fields and module examples
1. **DC-DC converter**
IRFR010TRPBF-VB is suitable for switching elements in DC-DC converters, especially in low voltage environments that require low on-resistance and high current. Its low RDS(ON) value and 60V breakdown voltage enable it to provide efficient energy conversion in DC-DC conversion applications.
2. **Motor drive**
In motor drive modules, such as stepper motors and DC motor drivers, IRFR010TRPBF-VB can handle high current loads and provide reliable switching control. Its high current carrying capacity and low on-resistance help improve the efficiency and stability of motor drive systems.
3. **Power management**
This MOSFET can be used in various power management applications, such as power protection circuits and power switches. Its efficient switching performance and low on-resistance enable it to effectively control current in power management systems and improve overall system efficiency.
4. **Consumer Electronics**
In consumer electronics products, such as portable devices and home appliances, IRFR010TRPBF-VB can be used as a switching element. Its compact TO252 package and high current capability make it suitable for providing reliable current control and switching functions in space-constrained applications.
1. **DC-DC converter**
IRFR010TRPBF-VB is suitable for switching elements in DC-DC converters, especially in low voltage environments that require low on-resistance and high current. Its low RDS(ON) value and 60V breakdown voltage enable it to provide efficient energy conversion in DC-DC conversion applications.
2. **Motor drive**
In motor drive modules, such as stepper motors and DC motor drivers, IRFR010TRPBF-VB can handle high current loads and provide reliable switching control. Its high current carrying capacity and low on-resistance help improve the efficiency and stability of motor drive systems.
3. **Power management**
This MOSFET can be used in various power management applications, such as power protection circuits and power switches. Its efficient switching performance and low on-resistance enable it to effectively control current in power management systems and improve overall system efficiency.
4. **Consumer Electronics**
In consumer electronics products, such as portable devices and home appliances, IRFR010TRPBF-VB can be used as a switching element. Its compact TO252 package and high current capability make it suitable for providing reliable current control and switching functions in space-constrained applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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