中文
English
IRFR010TM-VB Product details
Back to previous pageProduct introduction：
Product Introduction
IRFR010TM-VB is a high-performance N-channel MOSFET in TO252 package, designed for medium voltage and high current applications. The MOSFET can withstand drain-source voltage (VDS) up to 60V and provide drain current (ID) up to 18A. IRFR010TM-VB uses Trench technology and has low on-resistance and excellent switching performance. At VGS=10V, its on-resistance (RDS(ON)) is 73mΩ, making it perform well in high-efficiency applications. Its typical turn-on voltage (Vth) is 1.7V, which can be reliably turned on at lower gate-source voltages.
IRFR010TM-VB is a high-performance N-channel MOSFET in TO252 package, designed for medium voltage and high current applications. The MOSFET can withstand drain-source voltage (VDS) up to 60V and provide drain current (ID) up to 18A. IRFR010TM-VB uses Trench technology and has low on-resistance and excellent switching performance. At VGS=10V, its on-resistance (RDS(ON)) is 73mΩ, making it perform well in high-efficiency applications. Its typical turn-on voltage (Vth) is 1.7V, which can be reliably turned on at lower gate-source voltages.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | 73mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
1. **Device type**: N-channel MOSFET
2. **Package type**: TO252
3. **Drain-source voltage (VDS)**: 60V
4. **Gate-source voltage (VGS)**: ±20V
5. **Throw-on voltage (Vth)**: 1.7V
6. **On-resistance (RDS(ON))**:
- 85mΩ @ VGS=4.5V
- 73mΩ @ VGS=10V
7. **Drain current (ID)**: 18A
8. **Technology type**: Trench
9. **Operating temperature range**: -55°C to 150°C
1. **Device type**: N-channel MOSFET
2. **Package type**: TO252
3. **Drain-source voltage (VDS)**: 60V
4. **Gate-source voltage (VGS)**: ±20V
5. **Throw-on voltage (Vth)**: 1.7V
6. **On-resistance (RDS(ON))**:
- 85mΩ @ VGS=4.5V
- 73mΩ @ VGS=10V
7. **Drain current (ID)**: 18A
8. **Technology type**: Trench
9. **Operating temperature range**: -55°C to 150°C
Domain and module applications：
Application fields and module examples
The high current capability and low on-resistance of IRFR010TM-VB make it excel in multiple fields and applications:
1. **Power management and switching applications**: In power management modules, such as DC-DC converters and switch mode power supplies (SMPS), IRFR010TM-VB can be used for load switching and power conversion to improve system efficiency and performance. Its low on-resistance helps reduce power loss and improve system stability.
2. **Industrial drive systems**: In industrial automation and drive systems, this MOSFET can be used in motor drive and control circuits, suitable for handling high current loads, providing reliable switching performance and efficient current control.
3. **Electric vehicle (EV) charging system**: In the charger and battery management system of electric vehicles, IRFR010TM-VB can handle medium voltage and high current applications, suitable for efficient switch control and battery management of chargers, ensuring stable and efficient charging process.
4. **Consumer Electronic Devices**: In various consumer electronic devices, such as laptops, power tools, etc., IRFR010TM-VB can be used for power switching and battery management, providing efficient power control and lower power consumption, improving the overall performance and battery life of the device.
The high current capability and low on-resistance of IRFR010TM-VB make it excel in multiple fields and applications:
1. **Power management and switching applications**: In power management modules, such as DC-DC converters and switch mode power supplies (SMPS), IRFR010TM-VB can be used for load switching and power conversion to improve system efficiency and performance. Its low on-resistance helps reduce power loss and improve system stability.
2. **Industrial drive systems**: In industrial automation and drive systems, this MOSFET can be used in motor drive and control circuits, suitable for handling high current loads, providing reliable switching performance and efficient current control.
3. **Electric vehicle (EV) charging system**: In the charger and battery management system of electric vehicles, IRFR010TM-VB can handle medium voltage and high current applications, suitable for efficient switch control and battery management of chargers, ensuring stable and efficient charging process.
4. **Consumer Electronic Devices**: In various consumer electronic devices, such as laptops, power tools, etc., IRFR010TM-VB can be used for power switching and battery management, providing efficient power control and lower power consumption, improving the overall performance and battery life of the device.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
