IRFPS40N50LPBF-VB Product details
Product introduction:
IRFPS40N50LPBF-VB is a high-performance N-channel MOSFET in TO3P package based on SJ_Multi-EPI (Super Junction Multilayer EPI) technology. This MOSFET has a drain-source voltage (VDS) of up to 600V and a maximum drain current (ID) of 47A. Its low on-resistance (RDS(ON)) enables it to have lower power consumption and higher efficiency in high-voltage and high-current applications. IRFPS40N50LPBF-VB is mainly used in situations requiring high voltage and high current handling capabilities, providing stable switching performance and reliable current handling.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 47A | 60mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
- **Package type**: TO3P
- **Polarity**: N-channel
- **Maximum drain-source voltage (VDS)**: 600V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 60mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 47A
- **Technology**: SJ_Multi-EPI (Super Junction Multilayer EPI Technology)
- **Power consumption**: 150W
- **Junction temperature**: Up to 175°C
- **Gate charge (Qg)**: Maximum 140nC
- **Reverse recovery charge (Qrr)**: No significant reverse recovery charge
- **Typical operating frequency**: Less than 100kHz
Domain and module applications:
The high voltage, high current handling capability and low on-resistance of the IRFPS40N50LPBF-VB make it suitable for multiple high power and high voltage applications:
1. **High voltage power converter**
This MOSFET provides reliable switching performance in high voltage power converters. Its high VDS (600V) and low RDS(ON) enable it to maintain efficient power conversion in high voltage environments, suitable for AC-DC converters and DC-DC converters.
2. **Industrial motor control**
The IRFPS40N50LPBF-VB can withstand high currents and high voltages, making it ideal for motor drive systems such as industrial motor controllers and servo drives. Its excellent current handling capability and stability ensure smooth operation of the motor.
3. **Power Factor Correction (PFC) Circuit**
In the Power Factor Correction (PFC) circuit, the high voltage and high current handling capabilities of MOSFET enable it to effectively improve the system's power factor, optimize power quality and system efficiency.
4. **High Power Lighting System**
In high power lighting systems, such as high intensity discharge lamps (HID) or industrial lighting, the IRFPS40N50LPBF-VB provides reliable switching functions, supports high voltage and high current operations, and ensures the stability and efficiency of the lighting system.
5. **Electric Vehicle Charging System**
In the charging system of electric vehicles, the ability of MOSFET to handle high voltage and high current makes it very suitable for use in charging stations and on-board chargers. Its efficient switching performance helps improve charging efficiency and safety.
These application examples demonstrate the wide applicability of the IRFPS40N50LPBF-VB in high voltage and high power environments. Its excellent electrical performance enables it to play an important role in power conversion, motor control, PFC, power lighting and electric vehicle charging.
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