IRFPS38N60LPBF-VB Product details
Product introduction:
IRFPS38N60LPBF-VB is a high-voltage, high-current single N-channel MOSFET in TO3P package, designed for high-power and high-voltage applications. Its drain-source voltage (VDS) is as high as 600V and can handle drain currents up to 47A. This MOSFET uses SJ_Multi-EPI technology and has a low on-resistance (RDS(ON)) of 60mΩ, which makes its switching loss low at a gate-source voltage of 10V. The turn-on voltage (Vth) of IRFPS38N60LPBF-VB is 3.5V, and it can be stably turned on at a lower gate voltage, which is suitable for high-voltage, high-power switching and control applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 47A | 60mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
- **Package type**: TO3P
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Throughput voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 60mΩ @ VGS=10V
- **Drain current (ID)**: 47A
- **Technology type**: SJ_Multi-EPI
- **Power consumption**: According to the application scenario and heat dissipation design, low on-resistance helps reduce power consumption and improve system efficiency.
Domain and module applications:
1. **High-voltage switching power supply (SMPS)**
The 600V drain-source voltage and 47A drain current of IRFPS38N60LPBF-VB make it very suitable for use in high-voltage switching power supplies. It can effectively handle high voltage and high current loads, reduce switching losses, and improve power conversion efficiency. This makes it suitable for scenarios such as industrial power supplies, server power supplies, and high-performance power adapters.
2. **High-voltage inverter**
In high-voltage inverter applications, such as photovoltaic inverters and uninterruptible power supply (UPS) systems, the high voltage tolerance and low on-resistance of IRFPS38N60LPBF-VB ensure stable operation of the inverter in a high-voltage environment. It helps improve energy conversion efficiency and system reliability, and is widely used in solar power generation systems and high-voltage UPS systems.
3. **Motor drive system**
In electric vehicles and industrial motor drive applications, the IRFPS38N60LPBF-VB can provide high current handling capabilities to ensure the stability and efficiency of motor drive. Its low on-resistance and high voltage tolerance make it a key component in motor control systems, improving the response speed and overall efficiency of motor control.
4. **High-power load switching**
The IRFPS38N60LPBF-VB is also suitable for high-power load switching applications such as power regulation and control modules. Its high current and high voltage handling capabilities can meet the switching requirements of various high-power loads and are suitable for power control systems and industrial automation equipment.
The high voltage and high current handling capabilities of this MOSFET, coupled with its low on-resistance, enable it to perform well in high-power electronic systems, providing a stable and reliable switching solution for various applications requiring high voltage and high power.
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