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IRFPS35N50LPBF-VB Product details
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IRFPS35N50LPBF-VB is a high-voltage, high-power single N-channel MOSFET in TO3P package. With a drain-source voltage (VDS) of up to 600V and a drain current (ID) of 47A, this MOSFET is suitable for applications handling high voltage and high current. Its gate-source voltage (VGS) range is ±30V and its turn-on voltage (Vth) is 3.5V. The IRFPS35N50LPBF-VB uses SJ_Multi-EPI technology and has an on-resistance (RDS(ON)) of 60mΩ at VGS=10V, making it perform well in high-power switching applications. This MOSFET provides efficient switching performance and good thermal management capabilities, suitable for a variety of high-voltage applications.
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IRFPS35N50LPBF-VB is a high-voltage, high-power single N-channel MOSFET in TO3P package. With a drain-source voltage (VDS) of up to 600V and a drain current (ID) of 47A, this MOSFET is suitable for applications handling high voltage and high current. Its gate-source voltage (VGS) range is ±30V and its turn-on voltage (Vth) is 3.5V. The IRFPS35N50LPBF-VB uses SJ_Multi-EPI technology and has an on-resistance (RDS(ON)) of 60mΩ at VGS=10V, making it perform well in high-power switching applications. This MOSFET provides efficient switching performance and good thermal management capabilities, suitable for a variety of high-voltage applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 47A | 60mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
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- **Package type**: TO3P
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Throw-on voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 60mΩ @ VGS=10V
- **Maximum drain current (ID)**: 47A
- **Technology**: SJ_Multi-EPI
- **Power consumption**: 150W
- **Maximum operating temperature**: 150°C
**
- **Package type**: TO3P
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Throw-on voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 60mΩ @ VGS=10V
- **Maximum drain current (ID)**: 47A
- **Technology**: SJ_Multi-EPI
- **Power consumption**: 150W
- **Maximum operating temperature**: 150°C
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Domain and module applications：
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1. **High Voltage Switching Power Supply**: The IRFPS35N50LPBF-VB is suitable for high voltage switching power supply systems such as industrial power supplies and power converters. Its high drain-source voltage of up to 600V and low on-resistance of 60mΩ make it stable in high voltage and high power environments, providing efficient power conversion and switching control.
2. **Solar Inverter**: In solar inverter applications, this MOSFET is able to handle high voltage energy conversion. Its high voltage tolerance and low on-resistance ensure efficient operation and reliability of solar energy systems, and is suitable for inverter designs that require high voltage and high power.
3. **High Voltage Motor Drive**: This MOSFET is also suitable for high voltage motor drive systems such as power tools and industrial motors. Its high voltage and high current handling capabilities provide stable power control, ensuring efficient motor drive and control.
4. **Power Protection and High Voltage Switching**: IRFPS35N50LPBF-VB performs well in power protection and high voltage switching applications. Its high voltage withstand capability and low on-resistance enable it to effectively handle switching tasks in high voltage environments and provide reliable protection and control.
1. **High Voltage Switching Power Supply**: The IRFPS35N50LPBF-VB is suitable for high voltage switching power supply systems such as industrial power supplies and power converters. Its high drain-source voltage of up to 600V and low on-resistance of 60mΩ make it stable in high voltage and high power environments, providing efficient power conversion and switching control.
2. **Solar Inverter**: In solar inverter applications, this MOSFET is able to handle high voltage energy conversion. Its high voltage tolerance and low on-resistance ensure efficient operation and reliability of solar energy systems, and is suitable for inverter designs that require high voltage and high power.
3. **High Voltage Motor Drive**: This MOSFET is also suitable for high voltage motor drive systems such as power tools and industrial motors. Its high voltage and high current handling capabilities provide stable power control, ensuring efficient motor drive and control.
4. **Power Protection and High Voltage Switching**: IRFPS35N50LPBF-VB performs well in power protection and high voltage switching applications. Its high voltage withstand capability and low on-resistance enable it to effectively handle switching tasks in high voltage environments and provide reliable protection and control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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