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IRFPS30N60KPBF-VB Product details

Product introduction:

IRFPS30N60KPBF-VB MOSFET Product Introduction:
IRFPS30N60KPBF-VB is a high-voltage, high-current single N-channel MOSFET in TO3P package based on advanced SJ_Multi-EPI technology. With a drain-source voltage (VDS) of 600V and a drain current (ID) of 20A, this MOSFET can handle high voltage and medium current applications. With a threshold voltage (Vth) of 3.5V and an on-resistance (RDS(ON)) of 190mΩ@VGS=10V, it is designed for applications requiring high voltage control and robust performance. The IRFPS30N60KPBF-VB provides stable switching performance and efficient power management, making it an ideal choice for a variety of high voltage applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO3P Single-N 600V 3.5V 20A 190mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO3P Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO3P Single-N 600V 3.5V 20A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO3P Single-N 600V 3.5V 20A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO3P Single-N
IRFPS30N60KPBF-VB Detailed parameter description:
- **Model**: IRFPS30N60KPBF-VB
- **Package**: TO3P
- **MOSFET configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 190mΩ@VGS=10V
- **Maximum drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI technology
- **Operating temperature range**: Typically between -55°C to +150°C

Domain and module applications:

Applications and modules:
1. **High voltage switching power supply**: The 600V high withstand voltage of IRFPS30N60KPBF-VB makes it very suitable for high voltage switching power supplies such as industrial power supplies, power converters and power supply systems. In these applications, this MOSFET can effectively handle high voltages and provide stable switching performance and efficient power management.

2. **Motor drive control**: In electric vehicle drive systems and industrial motor control modules, the high voltage and medium current capabilities of IRFPS30N60KPBF-VB make it suitable for high voltage drive and control of motors. Its stable current handling capability and efficient switching performance can improve the reliability of motor drive systems.

3. **Inverters and frequency converters**: This MOSFET is suitable for high voltage inverter applications such as photovoltaic inverters, wind power inverters and frequency converters. IRFPS30N60KPBF-VB can perform effective voltage conversion in high voltage environments, ensuring high efficiency and stability of inverter systems.

4. **Power Amplifier**: IRFPS30N60KPBF-VB is also suitable for power amplifiers that require high voltage and power handling, such as high voltage audio amplifiers and RF amplifiers. MOSFETs are able to provide stable signal processing and power control in these high power applications.

With its high voltage and medium current capabilities, IRFPS30N60KPBF-VB is widely used in high voltage switching power supplies, motor drives, inverters and power amplifiers, providing reliable power control and efficient switching performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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