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IRFPF50PBF-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction of IRFPF50PBF-VB
IRFPF50PBF-VB is a single N-channel MOSFET in TO247 package with a drain-source voltage (VDS) of 900V and a gate-source voltage (VGS) of ±30V. Its gate threshold voltage (Vth) is 3.5V, the on-resistance (RDS(ON)) is 1500mΩ when VGS is 10V, and the maximum current carrying capacity is 5A. This MOSFET is manufactured based on SJ_Multi-EPI technology, with high voltage tolerance and good switching performance, suitable for high voltage applications and electronic systems requiring high reliability.
IRFPF50PBF-VB is a single N-channel MOSFET in TO247 package with a drain-source voltage (VDS) of 900V and a gate-source voltage (VGS) of ±30V. Its gate threshold voltage (Vth) is 3.5V, the on-resistance (RDS(ON)) is 1500mΩ when VGS is 10V, and the maximum current carrying capacity is 5A. This MOSFET is manufactured based on SJ_Multi-EPI technology, with high voltage tolerance and good switching performance, suitable for high voltage applications and electronic systems requiring high reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 900V | 3.5V | 5A | 1500mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 900V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 900V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
II. Detailed parameter description of IRFPF50PBF-VB
- **Package type**: TO247
- **Configuration**: Single N-channel
- **Breakdown voltage (VDS)**: 900V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1500mΩ@VGS=10V
- **Current (ID)**: 5A
- **Technology type**: SJ_Multi-EPI (multi-layer EPI technology)
- **Power consumption**: 94W (maximum power consumption depends on heat dissipation conditions)
- **Operating temperature range**: -55°C to +150°C
- **Maximum pulsed drain current**: 20A
- **Input capacitance (Ciss)**: 14000pF
- **Output capacitance (Coss)**: 850pF
- **Reverse recovery time (trr)**: 200ns
- **Package type**: TO247
- **Configuration**: Single N-channel
- **Breakdown voltage (VDS)**: 900V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1500mΩ@VGS=10V
- **Current (ID)**: 5A
- **Technology type**: SJ_Multi-EPI (multi-layer EPI technology)
- **Power consumption**: 94W (maximum power consumption depends on heat dissipation conditions)
- **Operating temperature range**: -55°C to +150°C
- **Maximum pulsed drain current**: 20A
- **Input capacitance (Ciss)**: 14000pF
- **Output capacitance (Coss)**: 850pF
- **Reverse recovery time (trr)**: 200ns
Domain and module applications：
3. Application fields and module examples
1. **High voltage power converter**
IRFPF50PBF-VB is very suitable for high voltage power converters, such as 900V AC-DC converters and DC-DC converters. This MOSFET is able to handle high voltage loads while providing low on-resistance, ensuring efficient energy conversion and reliability.
2. **Power inverter**
In power inverter applications, especially in high voltage inverters such as solar photovoltaic systems or wind power generation systems, IRFPF50PBF-VB is able to stably handle high voltage and high power, providing a reliable power conversion solution.
3. **High voltage switching circuit**
This MOSFET is suitable for circuits that require high voltage switching, such as high voltage switching power supplies and power electronic switches. Its 900V breakdown voltage and high current carrying capacity enable it to handle high voltage and high power loads, ensuring the stability and reliability of the system.
4. **Electric Vehicles and Charging Systems**
In electric vehicle charging systems, the IRFPF50PBF-VB can be used as a high voltage and high power switch to handle high voltage loads in battery charging and energy transfer. Its high voltage and high power capabilities enable it to effectively manage the charging process, ensuring safe and efficient power transfer.
1. **High voltage power converter**
IRFPF50PBF-VB is very suitable for high voltage power converters, such as 900V AC-DC converters and DC-DC converters. This MOSFET is able to handle high voltage loads while providing low on-resistance, ensuring efficient energy conversion and reliability.
2. **Power inverter**
In power inverter applications, especially in high voltage inverters such as solar photovoltaic systems or wind power generation systems, IRFPF50PBF-VB is able to stably handle high voltage and high power, providing a reliable power conversion solution.
3. **High voltage switching circuit**
This MOSFET is suitable for circuits that require high voltage switching, such as high voltage switching power supplies and power electronic switches. Its 900V breakdown voltage and high current carrying capacity enable it to handle high voltage and high power loads, ensuring the stability and reliability of the system.
4. **Electric Vehicles and Charging Systems**
In electric vehicle charging systems, the IRFPF50PBF-VB can be used as a high voltage and high power switch to handle high voltage loads in battery charging and energy transfer. Its high voltage and high power capabilities enable it to effectively manage the charging process, ensuring safe and efficient power transfer.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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