IRFPE40PBF-VB Product details
Product introduction:
IRFPE40PBF-VB is a high voltage N-channel MOSFET in TO-247 package based on Plannar technology. This MOSFET has a maximum drain-source voltage (VDS) of 850V and a drain current (ID) of 10A, as well as a relatively high on-resistance (RDS(ON)). It is designed mainly for applications requiring high voltage, but its relatively high on-resistance limits its efficiency in low-power applications. IRFPE40PBF-VB is suitable for use in high voltage environments, providing stable switching performance and reliable current handling capabilities.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 850V | 3.3V | 10A | 1150mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 850V | 3.3V | 10A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 850V | 3.3V | 10A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
- **Package type**: TO-247
- **Polarity**: N-channel
- **Maximum drain-source voltage (VDS)**: 850V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.3V
- **On-resistance (RDS(ON))**: 1150mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 10A
- **Technology**: Plannar
- **Power consumption**: 180W
- **Junction temperature**: Up to 150°C
- **Gate charge (Qg)**: Maximum 100nC
- **Reverse recovery charge (Qrr)**: No significant reverse recovery charge
- **Typical operating frequency**: less than 100kHz
Domain and module applications:
Due to its high voltage and high on-resistance, IRFPE40PBF-VB is mainly suitable for the following fields and modules:
1. **High voltage power switch**
This MOSFET can handle voltages up to 850V, making it very suitable for high voltage power switch applications. Although the on-resistance is high, it can still provide reliable performance in situations where efficient energy conversion is not required, such as high-voltage DC power switches.
2. **Power protection circuit**
In applications where circuits need to be protected from high voltage surges, the high VDS of IRFPE40PBF-VB can provide effective voltage isolation to protect power supplies and other sensitive components.
3. **High voltage converter**
Due to its ability to withstand high voltage, IRFPE40PBF-VB can be used in high voltage converters and power factor correction (PFC) circuits. Despite its high on-resistance, its high VDS can ensure the stability of the system's power conversion in these applications.
4. **Lighting control system**
In some high voltage lighting control systems, such as switching or regulating systems for high voltage bulbs, IRFPE40PBF-VB is able to handle high voltage and provide necessary switching functions.
5. **Industrial equipment**
In high voltage industrial equipment, IRFPE40PBF-VB can be used as a high voltage switch or control element, capable of handling the high voltage requirements in the equipment and providing reliable switching performance.
Although the on-resistance of IRFPE40PBF-VB is relatively high, its advantages in high voltage applications make it an effective choice in fields such as high voltage power switches, protection circuits and industrial equipment.
Technical support:
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