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IRFPE30PBF-VB Product details
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1. IRFPE30PBF-VB Product Introduction
IRFPE30PBF-VB is a high-voltage, high-current single N-channel MOSFET in TO247 package, designed for high voltage and high power applications. Its drain-source voltage (VDS) is as high as 850V and the drain current (ID) is 10A, which is very suitable for scenarios that need to handle high voltage. This MOSFET uses Planar technology and has an on-resistance (RDS(ON)) of 1150mΩ at a gate-source voltage of 10V. The turn-on voltage (Vth) of IRFPE30PBF-VB is 3.3V, ensuring reliable turn-on at lower gate voltages, which is very suitable for high voltage switches and power control systems.
IRFPE30PBF-VB is a high-voltage, high-current single N-channel MOSFET in TO247 package, designed for high voltage and high power applications. Its drain-source voltage (VDS) is as high as 850V and the drain current (ID) is 10A, which is very suitable for scenarios that need to handle high voltage. This MOSFET uses Planar technology and has an on-resistance (RDS(ON)) of 1150mΩ at a gate-source voltage of 10V. The turn-on voltage (Vth) of IRFPE30PBF-VB is 3.3V, ensuring reliable turn-on at lower gate voltages, which is very suitable for high voltage switches and power control systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 850V | 3.3V | 10A | 1150mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 850V | 3.3V | 10A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 850V | 3.3V | 10A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
II. Detailed parameter description of IRFPE30PBF-VB
- **Package type**: TO247
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 850V
- **Gate-source voltage (VGS)**: ±30V
- **Throughput voltage (Vth)**: 3.3V
- **On-resistance (RDS(ON))**: 1150mΩ @ VGS=10V
- **Drain current (ID)**: 10A
- **Technology type**: Planar
- **Power consumption**: According to the application scenario and heat dissipation design, the on-resistance is relatively high, and a better heat dissipation design may be required.
- **Package type**: TO247
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 850V
- **Gate-source voltage (VGS)**: ±30V
- **Throughput voltage (Vth)**: 3.3V
- **On-resistance (RDS(ON))**: 1150mΩ @ VGS=10V
- **Drain current (ID)**: 10A
- **Technology type**: Planar
- **Power consumption**: According to the application scenario and heat dissipation design, the on-resistance is relatively high, and a better heat dissipation design may be required.
Domain and module applications：
III. Application fields and module examples of IRFPE30PBF-VB
1. **High-voltage power switch**
The 850V drain-source voltage of IRFPE30PBF-VB makes it ideal for high-voltage power switch applications, such as high-voltage DC-DC converters and power management modules. In these applications, the MOSFET can handle high voltage environments while providing reliable switching performance through Planar technology.
2. **Power supply equipment**
In high-voltage power supply equipment, such as high-voltage power converters and power conditioners, the high voltage withstand capability and moderate drain current handling capability of IRFPE30PBF-VB enable it to reliably switch power loads. These devices may include industrial power conditioners and high-voltage power modules.
3. **High-voltage inverter**
In high-voltage inverter applications, such as solar photovoltaic systems and high-voltage uninterruptible power supplies (UPS), the IRFPE30PBF-VB is used as a switching element to handle high-voltage power conversion. Its high-voltage capability ensures stable operation and efficient energy conversion of the inverter at high voltage.
4. **Industrial control system**
The IRFPE30PBF-VB can also be used in industrial control systems, especially in scenarios where high-voltage control is required, such as high-voltage motor drives and high-voltage load switches. Although its on-resistance is relatively high, it can provide reliable control and protection functions under proper heat dissipation conditions.
The high voltage tolerance and moderate current capability of this MOSFET make it suitable for a variety of electronic systems that need to handle high voltages, and can provide stable performance in complex and demanding applications.
1. **High-voltage power switch**
The 850V drain-source voltage of IRFPE30PBF-VB makes it ideal for high-voltage power switch applications, such as high-voltage DC-DC converters and power management modules. In these applications, the MOSFET can handle high voltage environments while providing reliable switching performance through Planar technology.
2. **Power supply equipment**
In high-voltage power supply equipment, such as high-voltage power converters and power conditioners, the high voltage withstand capability and moderate drain current handling capability of IRFPE30PBF-VB enable it to reliably switch power loads. These devices may include industrial power conditioners and high-voltage power modules.
3. **High-voltage inverter**
In high-voltage inverter applications, such as solar photovoltaic systems and high-voltage uninterruptible power supplies (UPS), the IRFPE30PBF-VB is used as a switching element to handle high-voltage power conversion. Its high-voltage capability ensures stable operation and efficient energy conversion of the inverter at high voltage.
4. **Industrial control system**
The IRFPE30PBF-VB can also be used in industrial control systems, especially in scenarios where high-voltage control is required, such as high-voltage motor drives and high-voltage load switches. Although its on-resistance is relatively high, it can provide reliable control and protection functions under proper heat dissipation conditions.
The high voltage tolerance and moderate current capability of this MOSFET make it suitable for a variety of electronic systems that need to handle high voltages, and can provide stable performance in complex and demanding applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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