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IRFP9140PBF-VB Product details
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1. IRFP9140PBF-VB Product Introduction
IRFP9140PBF-VB is a single P-channel MOSFET in TO247 package with a drain-source voltage (VDS) of -100V and a gate-source voltage (VGS) of ±20V. The gate threshold voltage (Vth) of this MOSFET is -2V, the on-resistance (RDS(ON)) is 240mΩ at VGS of 4.5V and 200mΩ at VGS of 10V, and the maximum current carrying capacity is -21A. Manufactured based on Trench technology, the IRFP9140PBF-VB is suitable for P-channel switch applications that require high voltage and high current handling, providing excellent switching performance and low on-resistance.
IRFP9140PBF-VB is a single P-channel MOSFET in TO247 package with a drain-source voltage (VDS) of -100V and a gate-source voltage (VGS) of ±20V. The gate threshold voltage (Vth) of this MOSFET is -2V, the on-resistance (RDS(ON)) is 240mΩ at VGS of 4.5V and 200mΩ at VGS of 10V, and the maximum current carrying capacity is -21A. Manufactured based on Trench technology, the IRFP9140PBF-VB is suitable for P-channel switch applications that require high voltage and high current handling, providing excellent switching performance and low on-resistance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-P | -100V | -2V | -21A | 200mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-P | -100V | -2V | -21A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-P | -100V | -2V | -21A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-P |
2. IRFP9140PBF-VB detailed parameter description
- **Package type**: TO247
- **Configuration**: Single P-channel
- **Breakdown voltage (VDS)**: -100V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**:
- 240mΩ@VGS=4.5V
- 200mΩ@VGS=10V
- **Current (ID)**: -21A
- **Technology type**: Trench technology
- **Power consumption**: 94W (maximum power consumption depends on heat dissipation conditions)
- **Operating temperature range**: -55°C to +150°C
- **Maximum pulsed drain current**: -63A
- **Input capacitance (Ciss)**: 3800pF
- **Output capacitance (Coss)**: 1300pF
- **Reverse recovery time (trr)**: 150ns
- **Package type**: TO247
- **Configuration**: Single P-channel
- **Breakdown voltage (VDS)**: -100V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**:
- 240mΩ@VGS=4.5V
- 200mΩ@VGS=10V
- **Current (ID)**: -21A
- **Technology type**: Trench technology
- **Power consumption**: 94W (maximum power consumption depends on heat dissipation conditions)
- **Operating temperature range**: -55°C to +150°C
- **Maximum pulsed drain current**: -63A
- **Input capacitance (Ciss)**: 3800pF
- **Output capacitance (Coss)**: 1300pF
- **Reverse recovery time (trr)**: 150ns
Domain and module applications：
3. Application fields and module examples
1. **High voltage switching circuit**
IRFP9140PBF-VB is particularly suitable for high voltage switching circuits, such as P-channel switches in DC-DC converters. Its -100V breakdown voltage and low RDS(ON) value enable it to effectively control current in high voltage environments and reduce switching losses to ensure stable system operation.
2. **Motor control system**
In motor control systems, IRFP9140PBF-VB can be used in H-bridge circuits and other motor drive modules. Its high current carrying capacity and low on-resistance are suitable for handling high current requirements in motor drives, providing efficient power transmission and control capabilities.
3. **Power management system**
This MOSFET performs well in power management systems, such as power inverters and power protection circuits. Its -100V high voltage capability and low on-resistance enable it to provide efficient switching control and energy management in high voltage power systems.
4. **Automotive Electronics**
IRFP9140PBF-VB is suitable for high voltage and high power applications in automotive electronics, such as battery management systems and motor control for electric vehicles. Its high current capability and low on-resistance can support high power switching and energy management in automotive electronic systems, ensuring system stability and reliability.
1. **High voltage switching circuit**
IRFP9140PBF-VB is particularly suitable for high voltage switching circuits, such as P-channel switches in DC-DC converters. Its -100V breakdown voltage and low RDS(ON) value enable it to effectively control current in high voltage environments and reduce switching losses to ensure stable system operation.
2. **Motor control system**
In motor control systems, IRFP9140PBF-VB can be used in H-bridge circuits and other motor drive modules. Its high current carrying capacity and low on-resistance are suitable for handling high current requirements in motor drives, providing efficient power transmission and control capabilities.
3. **Power management system**
This MOSFET performs well in power management systems, such as power inverters and power protection circuits. Its -100V high voltage capability and low on-resistance enable it to provide efficient switching control and energy management in high voltage power systems.
4. **Automotive Electronics**
IRFP9140PBF-VB is suitable for high voltage and high power applications in automotive electronics, such as battery management systems and motor control for electric vehicles. Its high current capability and low on-resistance can support high power switching and energy management in automotive electronic systems, ensuring system stability and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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