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IRFP90N20DPBF-VB Product details
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IRFP90N20DPBF-VB Product Introduction
IRFP90N20DPBF-VB is a high-performance single-channel N-type MOSFET in TO247 package. This MOSFET is designed for medium and high voltage applications and can handle drain-source voltage (VDS) up to 200V and gate-source voltage (VGS) of ±20V. Its threshold voltage (Vth) is 4V, and its on-resistance (RDS(ON)) is 21mΩ (at VGS=10V), supporting a continuous drain current of up to 96A. The use of Trench technology enables it to have excellent switching performance and low power consumption at high current and high voltage, making it very suitable for applications requiring high efficiency and reliability.
IRFP90N20DPBF-VB is a high-performance single-channel N-type MOSFET in TO247 package. This MOSFET is designed for medium and high voltage applications and can handle drain-source voltage (VDS) up to 200V and gate-source voltage (VGS) of ±20V. Its threshold voltage (Vth) is 4V, and its on-resistance (RDS(ON)) is 21mΩ (at VGS=10V), supporting a continuous drain current of up to 96A. The use of Trench technology enables it to have excellent switching performance and low power consumption at high current and high voltage, making it very suitable for applications requiring high efficiency and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 200V | 4V | 96A | 21mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 200V | 4V | 96A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 200V | 4V | 96A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
IRFP90N20DPBF-VB Detailed parameter description
- **Package type**: TO247
- **Configuration**: Single-channel N-type MOSFET
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 4V
- **On-resistance (RDS(ON))**: 21mΩ (VGS=10V)
- **Continuous drain current (ID)**: 96A
- **Technology**: Trench
- **Maximum power consumption**: Depends on the specific heat dissipation conditions and working environment. The power consumption is determined by the package and heat dissipation design.
- **Thermal resistance**: Well-designed thermal management can optimize power consumption and heat dissipation performance.
- **Package type**: TO247
- **Configuration**: Single-channel N-type MOSFET
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 4V
- **On-resistance (RDS(ON))**: 21mΩ (VGS=10V)
- **Continuous drain current (ID)**: 96A
- **Technology**: Trench
- **Maximum power consumption**: Depends on the specific heat dissipation conditions and working environment. The power consumption is determined by the package and heat dissipation design.
- **Thermal resistance**: Well-designed thermal management can optimize power consumption and heat dissipation performance.
Domain and module applications：
Applicable fields and modules
The high current handling capability and low on-resistance of IRFP90N20DPBF-VB enable it to excel in multiple fields and modules:
1. **High-efficiency switching power supply**: In high-efficiency switching power supply applications, IRFP90N20DPBF-VB provides excellent switching performance and low power consumption characteristics, especially suitable for high current and medium voltage DC-DC converters, helping to improve the overall efficiency of the system.
2. **Motor drive system**: This MOSFET has important applications in electric vehicles or industrial motor drive systems. Its high current capability of 96A and low RDS(ON) ensure efficient operation and reliable control of the motor.
3. **Inverter**: In inverter systems, such as solar inverters, IRFP90N20DPBF-VB is able to handle high voltage and current, provide efficient power conversion, and ensure the stability and energy efficiency of the inverter.
4. **Power amplifier**: In high-power power amplifier design, this MOSFET can support high current processing to ensure stable operation and high efficiency of the amplifier.
5. **Battery management system**: This MOSFET can be used for high-current switching and protection applications in battery management systems. Its high current capability and low on-resistance are suitable for charge and discharge control and battery protection, enhancing the overall performance and reliability of the system.
The high current handling capability and low power consumption of the IRFP90N20DPBF-VB enable it to excel in multiple high-performance applications, meeting various high-voltage and high-current requirements.
The high current handling capability and low on-resistance of IRFP90N20DPBF-VB enable it to excel in multiple fields and modules:
1. **High-efficiency switching power supply**: In high-efficiency switching power supply applications, IRFP90N20DPBF-VB provides excellent switching performance and low power consumption characteristics, especially suitable for high current and medium voltage DC-DC converters, helping to improve the overall efficiency of the system.
2. **Motor drive system**: This MOSFET has important applications in electric vehicles or industrial motor drive systems. Its high current capability of 96A and low RDS(ON) ensure efficient operation and reliable control of the motor.
3. **Inverter**: In inverter systems, such as solar inverters, IRFP90N20DPBF-VB is able to handle high voltage and current, provide efficient power conversion, and ensure the stability and energy efficiency of the inverter.
4. **Power amplifier**: In high-power power amplifier design, this MOSFET can support high current processing to ensure stable operation and high efficiency of the amplifier.
5. **Battery management system**: This MOSFET can be used for high-current switching and protection applications in battery management systems. Its high current capability and low on-resistance are suitable for charge and discharge control and battery protection, enhancing the overall performance and reliability of the system.
The high current handling capability and low power consumption of the IRFP90N20DPBF-VB enable it to excel in multiple high-performance applications, meeting various high-voltage and high-current requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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