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IRFP460LCPBF-VB Product details

Product introduction:

IRFP460LCPBF-VB MOSFET Product Introduction:
IRFP460LCPBF-VB is a high-voltage, high-current single N-channel MOSFET in TO247 package based on advanced SJ_Multi-EPI technology. With a drain-source voltage (VDS) of 500V and a drain current (ID) of 40A, this MOSFET is suitable for high-power, high-voltage applications. With a threshold voltage (Vth) of 3.8V and an on-resistance (RDS(ON)) of 80mΩ@VGS=10V, it can provide stable and efficient switching performance in high-voltage environments. The IRFP460LCPBF-VB is designed to meet application scenarios with high voltage and high current requirements, ensuring excellent power control and reliability.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO247 Single-N 500V 3.8V 40A 80mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO247 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO247 Single-N 500V 3.8V 40A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO247 Single-N 500V 3.8V 40A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO247 Single-N
IRFP460LCPBF-VB Detailed parameter description:
- **Model**: IRFP460LCPBF-VB
- **Package**: TO247
- **MOSFET configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ@VGS=10V
- **Maximum drain current (ID)**: 40A
- **Technology**: SJ_Multi-EPI technology
- **Operating temperature range**: Typically between -55°C to +150°C

Domain and module applications:

Applications and modules:
1. **High voltage switching power supply**: The 500V high withstand voltage of IRFP460LCPBF-VB makes it particularly suitable for high voltage switching power supplies, such as industrial power supplies, communication power supplies, and high voltage power converters. In these applications, power modules that handle high voltage and high current are required, and the efficient switching performance and reliability of MOSFET can significantly improve the overall performance of the system.
2. **Inverters and frequency converters**: In high voltage inverter applications such as photovoltaic inverters and wind power inverters, IRFP460LCPBF-VB can effectively perform voltage conversion to ensure high efficiency and stability of the system. It is also suitable for power control of frequency converters, providing stable current conversion and switching control.
3. **Motor drive system**: Due to its high current capability, this MOSFET is suitable for high current motor drive systems, such as electric vehicle drives and industrial motor control modules. It is able to handle high current loads and provide efficient and reliable motor drive.
4. **Power Amplifier**: In applications that require high voltage and high power signals, such as high power audio amplifiers and RF power amplifiers, the IRFP460LCPBF-VB ensures efficient signal amplification and stable power control, improving amplifier performance and reliability.

With its high voltage and high current capabilities, the IRFP460LCPBF-VB demonstrates excellent application performance in high voltage switching power supplies, inverters, motor drives, and power amplifiers, and is suitable for applications that require high power and high voltage.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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