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IRFP460BPBF-VB Product details
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1. IRFP460BPBF-VB Product Introduction
IRFP460BPBF-VB is a single N-channel MOSFET in TO247 package with a drain-source voltage (VDS) of 500V and a gate-source voltage (VGS) of ±30V. The gate threshold voltage (Vth) of this MOSFET is 3.8V, the on-resistance (RDS(ON)) is 80mΩ (at VGS of 10V), and the maximum current carrying capacity is 40A. Manufactured based on SJ_Multi-EPI technology, this MOSFET has high voltage tolerance and low on-resistance, suitable for high voltage and high power applications.
IRFP460BPBF-VB is a single N-channel MOSFET in TO247 package with a drain-source voltage (VDS) of 500V and a gate-source voltage (VGS) of ±30V. The gate threshold voltage (Vth) of this MOSFET is 3.8V, the on-resistance (RDS(ON)) is 80mΩ (at VGS of 10V), and the maximum current carrying capacity is 40A. Manufactured based on SJ_Multi-EPI technology, this MOSFET has high voltage tolerance and low on-resistance, suitable for high voltage and high power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
2. IRFP460BPBF-VB detailed parameter description
- **Package type**: TO247
- **Configuration**: Single N-channel
- **Breakdown voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ@VGS=10V
- **Current (ID)**: 40A
- **Technology type**: SJ_Multi-EPI (multi-layer EPI technology)
- **Power consumption**: 94W (maximum power consumption depends on heat dissipation conditions)
- **Operating temperature range**: -55°C to +150°C
- **Maximum pulsed drain current**: 160A
- **Input capacitance (Ciss)**: 5300pF
- **Output capacitance (Coss)**: 850pF
- **Reverse recovery time (trr)**: 150ns
- **Package type**: TO247
- **Configuration**: Single N-channel
- **Breakdown voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ@VGS=10V
- **Current (ID)**: 40A
- **Technology type**: SJ_Multi-EPI (multi-layer EPI technology)
- **Power consumption**: 94W (maximum power consumption depends on heat dissipation conditions)
- **Operating temperature range**: -55°C to +150°C
- **Maximum pulsed drain current**: 160A
- **Input capacitance (Ciss)**: 5300pF
- **Output capacitance (Coss)**: 850pF
- **Reverse recovery time (trr)**: 150ns
Domain and module applications：
3. Application fields and module examples
1. **High-voltage power converter**
IRFP460BPBF-VB is ideal for use in high-voltage power converters, such as high-voltage DC-DC converters and AC-DC power converters. Its high voltage withstand capability of 500V and low on-resistance enable it to achieve efficient energy conversion and reduce energy loss in high-voltage applications.
2. **Power amplifier**
In audio power amplifiers and RF power amplifiers, the high voltage and high current characteristics of IRFP460BPBF-VB enable it to handle high-power signals. Its low RDS(ON) value helps improve the efficiency of power amplification and ensure stable and efficient output.
3. **Motor drive system**
This MOSFET also performs well in motor drive systems, especially in electric vehicles and industrial motor drive applications that need to handle high voltages and high currents. IRFP460BPBF-VB is able to handle higher current loads while maintaining low on-resistance, improving the overall efficiency and stability of the system.
4. **Inverter**
In inverter applications, such as solar inverters or uninterruptible power supply (UPS) systems, the IRFP460BPBF-VB is able to handle high power conversion tasks. Its 500V high voltage capability and 40A current carrying capacity ensure efficient power conversion and system stability, suitable for various energy management systems.
1. **High-voltage power converter**
IRFP460BPBF-VB is ideal for use in high-voltage power converters, such as high-voltage DC-DC converters and AC-DC power converters. Its high voltage withstand capability of 500V and low on-resistance enable it to achieve efficient energy conversion and reduce energy loss in high-voltage applications.
2. **Power amplifier**
In audio power amplifiers and RF power amplifiers, the high voltage and high current characteristics of IRFP460BPBF-VB enable it to handle high-power signals. Its low RDS(ON) value helps improve the efficiency of power amplification and ensure stable and efficient output.
3. **Motor drive system**
This MOSFET also performs well in motor drive systems, especially in electric vehicles and industrial motor drive applications that need to handle high voltages and high currents. IRFP460BPBF-VB is able to handle higher current loads while maintaining low on-resistance, improving the overall efficiency and stability of the system.
4. **Inverter**
In inverter applications, such as solar inverters or uninterruptible power supply (UPS) systems, the IRFP460BPBF-VB is able to handle high power conversion tasks. Its 500V high voltage capability and 40A current carrying capacity ensure efficient power conversion and system stability, suitable for various energy management systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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