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IRFP448PBF-VB Product details
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IRFP448PBF-VB MOSFET Product Introduction:
IRFP448PBF-VB is a high-voltage, high-current single N-channel MOSFET in TO247 package based on SJ_Multi-EPI technology. With a drain-source voltage (VDS) of 500V and a drain current (ID) of 40A, this MOSFET can handle high-power and high-voltage applications. Its threshold voltage (Vth) is 3.8V and its on-resistance (RDS(ON)) is 80mΩ@VGS=10V, which is suitable for providing excellent switching efficiency and power control in high-voltage applications. IRFP448PBF-VB is suitable for scenarios requiring high voltage, high current and high efficiency, and excels in areas such as power management and power conversion.
IRFP448PBF-VB is a high-voltage, high-current single N-channel MOSFET in TO247 package based on SJ_Multi-EPI technology. With a drain-source voltage (VDS) of 500V and a drain current (ID) of 40A, this MOSFET can handle high-power and high-voltage applications. Its threshold voltage (Vth) is 3.8V and its on-resistance (RDS(ON)) is 80mΩ@VGS=10V, which is suitable for providing excellent switching efficiency and power control in high-voltage applications. IRFP448PBF-VB is suitable for scenarios requiring high voltage, high current and high efficiency, and excels in areas such as power management and power conversion.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
IRFP448PBF-VB Detailed parameter description:
- **Model**: IRFP448PBF-VB
- **Package**: TO247
- **MOSFET configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ@VGS=10V
- **Maximum drain current (ID)**: 40A
- **Technology**: SJ_Multi-EPI technology
- **Operating temperature range**: Typically between -55°C to +150°C
- **Model**: IRFP448PBF-VB
- **Package**: TO247
- **MOSFET configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ@VGS=10V
- **Maximum drain current (ID)**: 40A
- **Technology**: SJ_Multi-EPI technology
- **Operating temperature range**: Typically between -55°C to +150°C
Domain and module applications：
Applications and modules:
1. **High-voltage switching power supply**: IRFP448PBF-VB is very suitable for high-voltage switching power supply, such as industrial power supply, communication power supply and high-voltage DC power supply, etc. It can provide efficient and reliable power conversion and voltage regulation under high voltage conditions, ensuring the stability and high efficiency of the system.
2. **Motor drive control**: Due to its high current and high voltage capabilities, this MOSFET can be used in motor drive control applications, especially drives for industrial motors and electric vehicles. In these systems, it can handle large currents and provide stable driving performance.
3. **Inverter and frequency converter**: In inverter and frequency converter applications, IRFP448PBF-VB can effectively convert energy, especially for high voltage applications such as photovoltaic inverters and wind energy converters, improving the energy efficiency and reliability of the entire system.
4. **Power amplifier**: This MOSFET is suitable for power amplifiers that need to process high-power and high-voltage signals, such as high-voltage audio power amplifiers and RF power amplifiers, to ensure the high efficiency and stability of the amplified signal.
IRFP448PBF-VB has excellent voltage and current handling capabilities and is suitable for high voltage, high current scenarios such as high voltage power management, motor drive, inverter and power amplifier, providing reliable power conversion and efficient switching performance.
1. **High-voltage switching power supply**: IRFP448PBF-VB is very suitable for high-voltage switching power supply, such as industrial power supply, communication power supply and high-voltage DC power supply, etc. It can provide efficient and reliable power conversion and voltage regulation under high voltage conditions, ensuring the stability and high efficiency of the system.
2. **Motor drive control**: Due to its high current and high voltage capabilities, this MOSFET can be used in motor drive control applications, especially drives for industrial motors and electric vehicles. In these systems, it can handle large currents and provide stable driving performance.
3. **Inverter and frequency converter**: In inverter and frequency converter applications, IRFP448PBF-VB can effectively convert energy, especially for high voltage applications such as photovoltaic inverters and wind energy converters, improving the energy efficiency and reliability of the entire system.
4. **Power amplifier**: This MOSFET is suitable for power amplifiers that need to process high-power and high-voltage signals, such as high-voltage audio power amplifiers and RF power amplifiers, to ensure the high efficiency and stability of the amplified signal.
IRFP448PBF-VB has excellent voltage and current handling capabilities and is suitable for high voltage, high current scenarios such as high voltage power management, motor drive, inverter and power amplifier, providing reliable power conversion and efficient switching performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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