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IRFP4410ZPBF-VB Product details
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1. IRFP4410ZPBF-VB Product Introduction
IRFP4410ZPBF-VB is a single N-channel MOSFET in TO247 package, with a drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) of ±20V, a gate threshold voltage (Vth) of 3V, an on-resistance (RDS(ON)) as low as 6mΩ (at VGS of 10V), and a maximum current carrying capacity of 150A. Based on Trench technology, this MOSFET has low on-resistance and high current carrying capacity, making it ideal for applications requiring high efficiency and high power handling.
IRFP4410ZPBF-VB is a single N-channel MOSFET in TO247 package, with a drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) of ±20V, a gate threshold voltage (Vth) of 3V, an on-resistance (RDS(ON)) as low as 6mΩ (at VGS of 10V), and a maximum current carrying capacity of 150A. Based on Trench technology, this MOSFET has low on-resistance and high current carrying capacity, making it ideal for applications requiring high efficiency and high power handling.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 3V | 150A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
2. IRFP4410ZPBF-VB detailed parameter description
- **Package type**: TO247
- **Configuration**: Single N-channel
- **Breakdown voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 6mΩ@VGS=10V
- **Current (ID)**: 150A
- **Technology type**: Trench technology
- **Power consumption**: 300W (maximum power consumption depends on heat dissipation conditions)
- **Operating temperature range**: -55°C to +175°C
- **Maximum pulsed drain current**: 480A
- **Input capacitance (Ciss)**: 7800pF
- **Output capacitance (Coss)**: 1100pF
- **Reverse recovery time (trr)**: 100ns
- **Package type**: TO247
- **Configuration**: Single N-channel
- **Breakdown voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 6mΩ@VGS=10V
- **Current (ID)**: 150A
- **Technology type**: Trench technology
- **Power consumption**: 300W (maximum power consumption depends on heat dissipation conditions)
- **Operating temperature range**: -55°C to +175°C
- **Maximum pulsed drain current**: 480A
- **Input capacitance (Ciss)**: 7800pF
- **Output capacitance (Coss)**: 1100pF
- **Reverse recovery time (trr)**: 100ns
Domain and module applications：
3. Application fields and module examples
1. **Power tools and motor drives**
The high current carrying capacity and low on-resistance of the IRFP4410ZPBF-VB make it particularly suitable for use in power tools and motor drive systems. These systems usually require high power processing and require the MOSFET to withstand high instantaneous currents to ensure that the driver can operate stably and has high energy efficiency.
2. **High-efficiency power management system**
In power management systems that require high power output and high conversion efficiency, such as DC-DC converters and AC-DC converters, the IRFP4410ZPBF-VB performs well. Its low RDS(ON) value helps reduce conduction losses and improve system efficiency, making it suitable for scenarios such as server power supplies and communication equipment power supplies.
3. **Automotive electronic systems**
This MOSFET is widely used in automotive electronic systems, such as high-power motor control and energy recovery systems for electric and hybrid vehicles. Its low on-resistance and high current carrying capacity ensure stability and reliability in high-power demand situations in automobiles.
4. **High-power inverter**
IRFP4410ZPBF-VB is suitable for use in high-power inverter applications, such as solar photovoltaic systems and wind energy conversion equipment, to achieve efficient power conversion. Its 100V breakdown voltage and 150A current carrying capacity enable it to handle high-power energy transmission tasks while maintaining low losses and high efficiency.
1. **Power tools and motor drives**
The high current carrying capacity and low on-resistance of the IRFP4410ZPBF-VB make it particularly suitable for use in power tools and motor drive systems. These systems usually require high power processing and require the MOSFET to withstand high instantaneous currents to ensure that the driver can operate stably and has high energy efficiency.
2. **High-efficiency power management system**
In power management systems that require high power output and high conversion efficiency, such as DC-DC converters and AC-DC converters, the IRFP4410ZPBF-VB performs well. Its low RDS(ON) value helps reduce conduction losses and improve system efficiency, making it suitable for scenarios such as server power supplies and communication equipment power supplies.
3. **Automotive electronic systems**
This MOSFET is widely used in automotive electronic systems, such as high-power motor control and energy recovery systems for electric and hybrid vehicles. Its low on-resistance and high current carrying capacity ensure stability and reliability in high-power demand situations in automobiles.
4. **High-power inverter**
IRFP4410ZPBF-VB is suitable for use in high-power inverter applications, such as solar photovoltaic systems and wind energy conversion equipment, to achieve efficient power conversion. Its 100V breakdown voltage and 150A current carrying capacity enable it to handle high-power energy transmission tasks while maintaining low losses and high efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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