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IRFP4332PBF-VB Product details
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IRFP4332PBF-VB Product Introduction
IRFP4332PBF-VB is a high-performance single-channel N-type MOSFET in TO247 package. Designed for medium and high voltage applications, this MOSFET has a drain-source voltage (VDS) of 250V and a gate-source voltage (VGS) rating of ±20V. Its threshold voltage (Vth) is 3.5V, and its on-resistance (RDS(ON)) is 40mΩ (at VGS=10V), supporting a continuous drain current of up to 60A. This MOSFET uses Trench technology, providing excellent switching performance and low power consumption, making it ideal for applications requiring high efficiency and high current handling.
IRFP4332PBF-VB is a high-performance single-channel N-type MOSFET in TO247 package. Designed for medium and high voltage applications, this MOSFET has a drain-source voltage (VDS) of 250V and a gate-source voltage (VGS) rating of ±20V. Its threshold voltage (Vth) is 3.5V, and its on-resistance (RDS(ON)) is 40mΩ (at VGS=10V), supporting a continuous drain current of up to 60A. This MOSFET uses Trench technology, providing excellent switching performance and low power consumption, making it ideal for applications requiring high efficiency and high current handling.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 250V | 3.5V | 60A | 40mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 250V | 3.5V | 60A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 250V | 3.5V | 60A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
IRFP4332PBF-VB Detailed parameter description
- **Package type**: TO247
- **Configuration**: Single-channel N-type MOSFET
- **Drain-source voltage (VDS)**: 250V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 40mΩ (at VGS=10V)
- **Continuous drain current (ID)**: 60A
- **Technology**: Trench
- **Maximum power consumption**: Power consumption is limited by packaging and thermal management, depending on operating conditions and thermal design.
- **Package type**: TO247
- **Configuration**: Single-channel N-type MOSFET
- **Drain-source voltage (VDS)**: 250V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 40mΩ (at VGS=10V)
- **Continuous drain current (ID)**: 60A
- **Technology**: Trench
- **Maximum power consumption**: Power consumption is limited by packaging and thermal management, depending on operating conditions and thermal design.
Domain and module applications：
Applicable fields and modules
The high current capability and medium voltage handling capability of the IRFP4332PBF-VB MOSFET make it suitable for the following fields and modules:
1. **Switching power supply**: In switching power supply applications, the IRFP4332PBF-VB can be used as a high-efficiency switching element, especially for medium-voltage DC-DC converters. The 250V withstand voltage capability and 40mΩ on-resistance help reduce power loss, improve conversion efficiency, and ensure stable power output.
2. **Motor drive system**: This MOSFET is suitable for high-current motor drive systems, such as electric vehicle motor drives or industrial motor control. Its drain current capability of up to 60A and low on-resistance characteristics support efficient current control and thermal management, enhancing the overall performance and reliability of the system.
3. **Inverter**: In inverter systems, the IRFP4332PBF-VB can handle high currents and medium voltages, and is suitable for the design of solar inverters or other power inverters. Its excellent switching performance and low power consumption ensure high efficiency and stability of the inverter.
4. **Power amplifier**: In high-power power amplifier circuits, this MOSFET can effectively support current and voltage processing requirements. Its high current capability and low on-resistance of 40mΩ ensure stable operation and high efficiency of the power amplifier.
5. **Battery management system**: The IRFP4332PBF-VB is also suitable for high-current switching and protection applications in battery management systems. Its high current handling capability and low power consumption enable it to provide reliable battery protection and current control, and is particularly suitable for high-current charge and discharge control systems.
The high current capability and medium voltage handling capability of the IRFP4332PBF-VB MOSFET make it suitable for the following fields and modules:
1. **Switching power supply**: In switching power supply applications, the IRFP4332PBF-VB can be used as a high-efficiency switching element, especially for medium-voltage DC-DC converters. The 250V withstand voltage capability and 40mΩ on-resistance help reduce power loss, improve conversion efficiency, and ensure stable power output.
2. **Motor drive system**: This MOSFET is suitable for high-current motor drive systems, such as electric vehicle motor drives or industrial motor control. Its drain current capability of up to 60A and low on-resistance characteristics support efficient current control and thermal management, enhancing the overall performance and reliability of the system.
3. **Inverter**: In inverter systems, the IRFP4332PBF-VB can handle high currents and medium voltages, and is suitable for the design of solar inverters or other power inverters. Its excellent switching performance and low power consumption ensure high efficiency and stability of the inverter.
4. **Power amplifier**: In high-power power amplifier circuits, this MOSFET can effectively support current and voltage processing requirements. Its high current capability and low on-resistance of 40mΩ ensure stable operation and high efficiency of the power amplifier.
5. **Battery management system**: The IRFP4332PBF-VB is also suitable for high-current switching and protection applications in battery management systems. Its high current handling capability and low power consumption enable it to provide reliable battery protection and current control, and is particularly suitable for high-current charge and discharge control systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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