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IRFP4137PBF-VB Product details
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1. IRFP4137PBF-VB Product Introduction
IRFP4137PBF-VB is a single N-channel MOSFET in TO247 package with a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V. Its gate threshold voltage (Vth) is 3.5V, the on-resistance (RDS(ON)) is 75mΩ (at VGS of 10V), and the maximum current carrying capacity is 47A. This MOSFET is manufactured based on SJ_Multi-EPI technology, providing high voltage tolerance and low on-resistance, making it ideal for high-voltage switching and power conversion applications.
IRFP4137PBF-VB is a single N-channel MOSFET in TO247 package with a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V. Its gate threshold voltage (Vth) is 3.5V, the on-resistance (RDS(ON)) is 75mΩ (at VGS of 10V), and the maximum current carrying capacity is 47A. This MOSFET is manufactured based on SJ_Multi-EPI technology, providing high voltage tolerance and low on-resistance, making it ideal for high-voltage switching and power conversion applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | 75mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
2. IRFP4137PBF-VB detailed parameter description
- **Package type**: TO247
- **Configuration**: Single N-channel
- **Breakdown voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 75mΩ@VGS=10V
- **Current (ID)**: 47A
- **Technology type**: SJ_Multi-EPI (multi-layer EPI technology)
- **Power consumption**: 94W (maximum power consumption depends on heat dissipation conditions)
- **Operating temperature range**: -55°C to +150°C
- **Maximum pulsed drain current**: 188A
- **Input capacitance (Ciss)**: 6500pF
- **Output capacitance (Coss)**: 900pF
- **Reverse recovery time (trr)**: 150ns
- **Package type**: TO247
- **Configuration**: Single N-channel
- **Breakdown voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 75mΩ@VGS=10V
- **Current (ID)**: 47A
- **Technology type**: SJ_Multi-EPI (multi-layer EPI technology)
- **Power consumption**: 94W (maximum power consumption depends on heat dissipation conditions)
- **Operating temperature range**: -55°C to +150°C
- **Maximum pulsed drain current**: 188A
- **Input capacitance (Ciss)**: 6500pF
- **Output capacitance (Coss)**: 900pF
- **Reverse recovery time (trr)**: 150ns
Domain and module applications：
3. Application fields and module examples
1. **High-voltage power management system**
IRFP4137PBF-VB is particularly suitable for high-voltage power management systems, such as high-voltage DC-DC converters and AC-DC power converters. Its high voltage withstand capability of 650V enables it to effectively handle high voltage inputs, while its low on-resistance ensures efficient power conversion and reduces energy losses.
2. **Power amplifier**
In audio power amplifiers and RF power amplifiers, the high voltage and high current characteristics of IRFP4137PBF-VB enable it to handle high power signals. Its excellent switching performance and low RDS(ON) enable it to provide stable and efficient power amplification in these applications.
3. **Industrial motor drive**
In industrial motor drive systems, especially those that need to handle high voltage and high current, IRFP4137PBF-VB is an ideal switching element. It can handle high voltage and high current loads in electric vehicles and large industrial motors, improving system reliability and efficiency.
4. **Inverter and Energy Management**
In solar inverters and uninterruptible power supply (UPS) systems, this MOSFET is able to handle high power conversion needs. Its 650V high voltage capability makes it suitable for use in high power inverter applications, ensuring efficient and stable power conversion and adapting to the needs of various energy management systems.
1. **High-voltage power management system**
IRFP4137PBF-VB is particularly suitable for high-voltage power management systems, such as high-voltage DC-DC converters and AC-DC power converters. Its high voltage withstand capability of 650V enables it to effectively handle high voltage inputs, while its low on-resistance ensures efficient power conversion and reduces energy losses.
2. **Power amplifier**
In audio power amplifiers and RF power amplifiers, the high voltage and high current characteristics of IRFP4137PBF-VB enable it to handle high power signals. Its excellent switching performance and low RDS(ON) enable it to provide stable and efficient power amplification in these applications.
3. **Industrial motor drive**
In industrial motor drive systems, especially those that need to handle high voltage and high current, IRFP4137PBF-VB is an ideal switching element. It can handle high voltage and high current loads in electric vehicles and large industrial motors, improving system reliability and efficiency.
4. **Inverter and Energy Management**
In solar inverters and uninterruptible power supply (UPS) systems, this MOSFET is able to handle high power conversion needs. Its 650V high voltage capability makes it suitable for use in high power inverter applications, ensuring efficient and stable power conversion and adapting to the needs of various energy management systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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