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IRFP360PBF-VB Product details

Product introduction:

1. IRFP360PBF-VB Product Introduction

IRFP360PBF-VB is a high voltage N-channel MOSFET manufactured using SJ_Multi-EPI technology and designed to handle high voltage and high power applications. This MOSFET is packaged in a TO-247 housing and has a drain-source voltage (VDS) of up to 500V and a gate-source voltage (VGS) of ±30V. Its turn-on voltage is 3.8V, and it provides an on-resistance (RDS(ON)) of 80mΩ at a VGS of 10V, supporting a drain current (ID) of up to 40A. The design of the IRFP360PBF-VB makes it suitable for switching applications in high voltage environments, providing stable performance and good thermal management.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO247 Single-N 500V 3.8V 40A 80mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO247 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO247 Single-N 500V 3.8V 40A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO247 Single-N 500V 3.8V 40A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO247 Single-N
2. IRFP360PBF-VB Detailed parameter description

- **Package type**: TO247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Throw-on voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ @ VGS = 10V
- **Drain current (ID)**: 40A
- **Technology**: SJ_Multi-EPI technology
- **Maximum power consumption (Ptot)**: 300W
- **Switching time**: Suitable for medium frequency applications with good switching characteristics

Domain and module applications:

3. Application fields and module examples

The high voltage capability and reasonable on-resistance of IRFP360PBF-VB make it have significant applications in the following fields and modules:

1. **High voltage power converter**: In high voltage DC-DC converters, IRFP360PBF-VB can effectively handle high voltage loads of 500V, suitable for industrial power supplies and high voltage power modules. Its high voltage capability and low on-resistance ensure efficient energy conversion and low power consumption operation.

2. **Power inverter**: This MOSFET is suitable for solar inverters and other high power inverter systems, capable of handling high voltage and high current, ensuring system reliability and high efficiency. IRFP360PBF-VB provides stable switching operation and is suitable for high voltage DC to AC conversion applications.

3. **High voltage switching**: In high voltage switching applications, such as high voltage power switches, relay drivers, etc., the IRFP360PBF-VB can provide stable switching performance and is suitable for switching circuits that require 500V voltage to ensure safe and efficient operation of the system.

4. **Battery management system**: In systems that require high voltage battery management and protection, this MOSFET can be used for switching and protecting high voltage batteries, suitable for electric vehicles, high voltage energy storage systems, etc. Its high voltage handling capability and low on-resistance ensure efficient current control and system protection.

The high voltage and high current handling capabilities of the IRFP360PBF-VB make it an ideal choice for a variety of high voltage and high power applications, meeting stringent power management and switching requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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