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IRFP340PBF-VB Product details

Product introduction:

1. IRFP340PBF-VB Product Introduction

IRFP340PBF-VB is a single N-channel MOSFET in TO247 package with a drain-source voltage (VDS) of 500V and a gate-source voltage (VGS) of ±30V. Its gate threshold voltage (Vth) is 3.8V, the on-resistance (RDS(ON)) is 80mΩ (at VGS of 10V), and the maximum current carrying capacity is 40A. This MOSFET is manufactured using SJ_Multi-EPI technology and has high voltage tolerance and low on-resistance. It is suitable for high voltage and high current applications such as power amplifiers, power converters and industrial motor drives.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO247 Single-N 500V 3.8V 40A 80mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO247 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO247 Single-N 500V 3.8V 40A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO247 Single-N 500V 3.8V 40A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO247 Single-N
2. IRFP340PBF-VB detailed parameter description

- **Package type**: TO247
- **Configuration**: Single N-channel
- **Breakdown voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ@VGS=10V
- **Current (ID)**: 40A
- **Technology type**: SJ_Multi-EPI (multi-layer EPI technology)
- **Power consumption**: 94W (maximum power consumption depends on heat dissipation conditions)
- **Operating temperature range**: -55°C to +150°C
- **Maximum pulsed drain current**: 160A
- **Input capacitance (Ciss)**: 4700pF
- **Output capacitance (Coss)**: 750pF
- **Reverse recovery time (trr)**: 100ns

Domain and module applications:

3. Application fields and module examples

1. **High-voltage power converter**
IRFP340PBF-VB is very suitable for switching control of high-voltage power converters. This MOSFET can handle voltages up to 500V and is suitable for applications such as high-voltage DC-DC converters and AC-DC power converters. Its low on-resistance characteristics help improve system efficiency and reduce energy losses.

2. **Power amplifier**
In audio and RF power amplifiers, the high voltage tolerance and good switching performance of IRFP340PBF-VB enable it to effectively handle high-power signals. Its low on-resistance helps achieve efficient power amplification and maintain stable output.

3. **Industrial motor drive**
This MOSFET is also widely used in industrial motor drive systems, especially in situations where high voltage and high current need to be handled, such as electric vehicle drive systems and large industrial motor drives. Its high current carrying capacity and low RDS(ON) characteristics make it an important switching component in these applications.

4. **Inverter**
In inverter applications, the IRFP340PBF-VB can handle high power conversion tasks, such as solar inverters or uninterruptible power supply (UPS) systems. Its 500V high voltage capability and high current carrying capacity make it suitable for use in these applications that require high power conversion and stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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