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IRFP32N50KPBF-VB Product details
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IRFP32N50KPBF-VB Product Introduction
IRFP32N50KPBF-VB is a high-performance single-channel N-type MOSFET in TO247 package. It is designed for medium and high voltage applications, with a drain-source voltage (VDS) of 500V and a gate-source voltage (VGS) rating of ±30V. The MOSFET has a threshold voltage (Vth) of 3.8V, an on-resistance (RDS(ON)) of 80mΩ (at VGS=10V), and supports a continuous drain current of up to 40A. Using SJ_Multi-EPI (silicon channel multilayer structure) technology, this MOSFET provides good high-voltage performance and reliability, and is very suitable for high voltage and high power applications.
IRFP32N50KPBF-VB is a high-performance single-channel N-type MOSFET in TO247 package. It is designed for medium and high voltage applications, with a drain-source voltage (VDS) of 500V and a gate-source voltage (VGS) rating of ±30V. The MOSFET has a threshold voltage (Vth) of 3.8V, an on-resistance (RDS(ON)) of 80mΩ (at VGS=10V), and supports a continuous drain current of up to 40A. Using SJ_Multi-EPI (silicon channel multilayer structure) technology, this MOSFET provides good high-voltage performance and reliability, and is very suitable for high voltage and high power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
IRFP32N50KPBF-VB Detailed parameter description
- **Package type**: TO247
- **Configuration**: Single-channel N-type MOSFET
- **Drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ (at VGS=10V)
- **Continuous drain current (ID)**: 40A
- **Technology**: SJ_Multi-EPI (Silicon Channel Multilayer Structure)
- **Maximum power consumption**: Power consumption is limited by packaging and thermal management according to operating conditions and thermal design.
- **Package type**: TO247
- **Configuration**: Single-channel N-type MOSFET
- **Drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ (at VGS=10V)
- **Continuous drain current (ID)**: 40A
- **Technology**: SJ_Multi-EPI (Silicon Channel Multilayer Structure)
- **Maximum power consumption**: Power consumption is limited by packaging and thermal management according to operating conditions and thermal design.
Domain and module applications：
Applicable fields and modules
The medium-to-high voltage capability and moderate on-resistance of the IRFP32N50KPBF-VB MOSFET make it very suitable for the following fields and modules:
1. **High-voltage switching power supply**: This MOSFET is ideal for high-voltage switching power supplies, such as AC-DC converters. Its 500V withstand voltage ensures stable handling of high-voltage inputs, while the 80mΩ on-resistance helps improve power conversion efficiency and reduce energy loss.
2. **Industrial power systems**: In industrial power systems, such as motor drive systems and power modules, the IRFP32N50KPBF-VB is able to stably handle high voltage currents. Its drain current capability of up to 40A enables it to meet high load requirements.
3. **Inverter**: In inverter applications, such as solar inverters or power inverters, this MOSFET is able to handle high-voltage DC power and efficiently convert it to AC, suitable for high-power applications, ensuring the reliability and efficiency of the inverter.
4. **Welding equipment**: In arc welding or other high-voltage welding equipment, the high voltage withstand capability and moderate on-resistance of this MOSFET make it a key switching element to ensure stable and safe operation during the welding process.
5. **High-voltage power amplifier**: In power amplifier circuits that need to handle high voltages, the IRFP32N50KPBF-VB can effectively support high power amplification requirements, providing reliable switching performance and stable power handling capabilities.
The medium-to-high voltage capability and moderate on-resistance of the IRFP32N50KPBF-VB MOSFET make it very suitable for the following fields and modules:
1. **High-voltage switching power supply**: This MOSFET is ideal for high-voltage switching power supplies, such as AC-DC converters. Its 500V withstand voltage ensures stable handling of high-voltage inputs, while the 80mΩ on-resistance helps improve power conversion efficiency and reduce energy loss.
2. **Industrial power systems**: In industrial power systems, such as motor drive systems and power modules, the IRFP32N50KPBF-VB is able to stably handle high voltage currents. Its drain current capability of up to 40A enables it to meet high load requirements.
3. **Inverter**: In inverter applications, such as solar inverters or power inverters, this MOSFET is able to handle high-voltage DC power and efficiently convert it to AC, suitable for high-power applications, ensuring the reliability and efficiency of the inverter.
4. **Welding equipment**: In arc welding or other high-voltage welding equipment, the high voltage withstand capability and moderate on-resistance of this MOSFET make it a key switching element to ensure stable and safe operation during the welding process.
5. **High-voltage power amplifier**: In power amplifier circuits that need to handle high voltages, the IRFP32N50KPBF-VB can effectively support high power amplification requirements, providing reliable switching performance and stable power handling capabilities.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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