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IRFP31N50LPBF-VB Product details

Product introduction:

1. IRFP31N50LPBF-VB Product Introduction
IRFP31N50LPBF-VB is a high-voltage N-channel MOSFET in TO-247 package, designed using advanced SJ_Multi-EPI technology. The device is able to operate stably at high voltages and provide reliable current handling capabilities. It is designed to achieve low on-resistance and excellent switching performance, making it excel in applications requiring high voltage and high power. IRFP31N50LPBF-VB is suitable for a variety of power conversion and switching applications, providing efficient power control and management solutions.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO247 Single-N 500V 3.8V 40A 80mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO247 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO247 Single-N 500V 3.8V 40A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO247 Single-N 500V 3.8V 40A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO247 Single-N
2. IRFP31N50LPBF-VB Detailed parameter description
- **Package type**: TO-247
- **Polarity**: N-channel
- **Maximum drain-source voltage (VDS)**: 500V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 40A
- **Technology**: SJ_Multi-EPI (Super Junction Multilayer EPI Technology)
- **Power consumption**: 300W
- **Junction temperature**: Up to 175°C
- **Gate charge (Qg)**: Maximum 120nC
- **Reverse recovery charge (Qrr)**: max 320nC
- **Typical operating frequency**: 100Hz to 100kHz

Domain and module applications:

3. Application fields and modules
IRFP31N50LPBF-VB plays an important role in multiple fields and modules, especially in scenarios that require high voltage and high power handling capabilities:

1. **Power converter**
Due to its high withstand voltage and low on-resistance, IRFP31N50LPBF-VB is suitable for high voltage switching power supplies, which can effectively handle high voltages of 500V and ensure efficient and stable power conversion. It provides reliable power conversion functions in power management systems.

2. **Industrial motor drive**
In industrial motor drive systems, this MOSFET can handle high voltage and high current requirements, providing stable switching performance for motor control. Its high current capability and low on-resistance ensure efficient operation of the motor and long-term stable operation.

3. **Power inverter**
IRFP31N50LPBF-VB is suitable for power inverters, which convert DC power into AC power. Its high VDS and excellent switching performance enable it to perform well in handling high voltage and power conversion in inverters, ensuring system efficiency and reliability.

4. **Welding Equipment**
In high-power welding equipment, this MOSFET is able to handle high current and high voltage, ensuring the stability of the welding process. Its withstand voltage characteristics and high current handling capabilities enable it to perform well in welding applications.

5. **UPS System**
In uninterruptible power supply (UPS) systems, the IRFP31N50LPBF-VB provides efficient power switching capabilities. Its high voltage handling capability and low on-resistance enable it to stably support power conversion and stabilize power output in UPS systems.

These application examples demonstrate the wide applicability of the IRFP31N50LPBF-VB in fields that require high voltage and high power handling, including key applications such as power management, motor drives, inverters, and welding equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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