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IRFP2907ZPBF-VB Product details
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Product Introduction
IRFP2907ZPBF-VB is a high-performance N-channel MOSFET in TO247 package. The device can withstand drain-source voltage (VDS) up to 80V and maximum gate-source voltage (VGS) of ±20V. Its turn-on threshold voltage (Vth) is 3.5V and has extremely low on-resistance (RDS(ON)), which is 4mΩ at VGS=4.5V and 2.8mΩ at VGS=10V. IRFP2907ZPBF-VB can support a maximum continuous drain current (ID) of up to 215A. The use of Trench technology makes this MOSFET perform well in high current and low power applications, and is suitable for high-efficiency switching and power management systems.
IRFP2907ZPBF-VB is a high-performance N-channel MOSFET in TO247 package. The device can withstand drain-source voltage (VDS) up to 80V and maximum gate-source voltage (VGS) of ±20V. Its turn-on threshold voltage (Vth) is 3.5V and has extremely low on-resistance (RDS(ON)), which is 4mΩ at VGS=4.5V and 2.8mΩ at VGS=10V. IRFP2907ZPBF-VB can support a maximum continuous drain current (ID) of up to 215A. The use of Trench technology makes this MOSFET perform well in high current and low power applications, and is suitable for high-efficiency switching and power management systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 80V | 3.5V | 215A | 2.8mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 80V | 3.5V | 215A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 80V | 3.5V | 215A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Package**: TO247
- **Polarity**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 80V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 4mΩ @ VGS=4.5V
- 2.8mΩ @ VGS=10V
- **Maximum drain current (ID)**: 215A
- **Power consumption (Ptot)**: 300W
- **Operating temperature range**: -55°C to +150°C
- **Technology**: Trench
- **Package**: TO247
- **Polarity**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 80V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 4mΩ @ VGS=4.5V
- 2.8mΩ @ VGS=10V
- **Maximum drain current (ID)**: 215A
- **Power consumption (Ptot)**: 300W
- **Operating temperature range**: -55°C to +150°C
- **Technology**: Trench
Domain and module applications：
Applications and module examples
1. **High-power switching power supply**: The low on-resistance and high current handling capability of the IRFP2907ZPBF-VB make it ideal for use in high-power switching power supplies such as DC-DC converters and high-efficiency power modules. These applications require the MOSFET to maintain minimal power dissipation and heat loss during the switching process to improve overall system efficiency.
2. **Electric Vehicles (EV) and Hybrid Electric Vehicles (HEV)**: In the battery management and motor drive systems of EVs and HEVs, this MOSFET is capable of handling high currents and medium voltages, suitable for battery balancing, charging, and drive control, ensuring system efficiency and stability.
3. **Industrial Motor Drive**: In industrial automation, the IRFP2907ZPBF-VB can be used as a switching element for high-power motor drives. Its high current carrying capability and low on-resistance make it suitable for efficient motor control and can withstand harsh industrial environments.
4. **Power Regulators and Inverters**: This MOSFET is suitable for power regulators and inverter modules, especially in applications that require high switching efficiency and low power loss. The high current capability and low RDS(ON) characteristics of the IRFP2907ZPBF-VB help improve the overall efficiency and reliability of the inverter.
The excellent performance of the IRFP2907ZPBF-VB enables it to perform well in applications that require high current and low power consumption, and is widely used in high power power supplies, automotive electronics, and industrial control systems.
1. **High-power switching power supply**: The low on-resistance and high current handling capability of the IRFP2907ZPBF-VB make it ideal for use in high-power switching power supplies such as DC-DC converters and high-efficiency power modules. These applications require the MOSFET to maintain minimal power dissipation and heat loss during the switching process to improve overall system efficiency.
2. **Electric Vehicles (EV) and Hybrid Electric Vehicles (HEV)**: In the battery management and motor drive systems of EVs and HEVs, this MOSFET is capable of handling high currents and medium voltages, suitable for battery balancing, charging, and drive control, ensuring system efficiency and stability.
3. **Industrial Motor Drive**: In industrial automation, the IRFP2907ZPBF-VB can be used as a switching element for high-power motor drives. Its high current carrying capability and low on-resistance make it suitable for efficient motor control and can withstand harsh industrial environments.
4. **Power Regulators and Inverters**: This MOSFET is suitable for power regulators and inverter modules, especially in applications that require high switching efficiency and low power loss. The high current capability and low RDS(ON) characteristics of the IRFP2907ZPBF-VB help improve the overall efficiency and reliability of the inverter.
The excellent performance of the IRFP2907ZPBF-VB enables it to perform well in applications that require high current and low power consumption, and is widely used in high power power supplies, automotive electronics, and industrial control systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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