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IRFP27N60KPBF-VB Product details
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IRFP27N60KPBF-VB MOSFET Product Introduction:
IRFP27N60KPBF-VB is a high-voltage, high-power single N-channel MOSFET, packaged in TO247 and manufactured using SJ_Multi-EPI technology. This MOSFET has a drain-source voltage (VDS) of 650V, suitable for high-voltage applications. Its threshold voltage (Vth) is 3.5V, on-resistance (RDS(ON)) is 160mΩ@VGS=10V, and maximum drain current (ID) is 20A, capable of stable operation under high voltage and medium current conditions. This MOSFET is designed to provide efficient switching performance and durability, suitable for high-power and high-voltage electronic circuits.
IRFP27N60KPBF-VB is a high-voltage, high-power single N-channel MOSFET, packaged in TO247 and manufactured using SJ_Multi-EPI technology. This MOSFET has a drain-source voltage (VDS) of 650V, suitable for high-voltage applications. Its threshold voltage (Vth) is 3.5V, on-resistance (RDS(ON)) is 160mΩ@VGS=10V, and maximum drain current (ID) is 20A, capable of stable operation under high voltage and medium current conditions. This MOSFET is designed to provide efficient switching performance and durability, suitable for high-power and high-voltage electronic circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
IRFP27N60KPBF-VB Detailed parameter description:
- **Model**: IRFP27N60KPBF-VB
- **Package**: TO247
- **MOSFET configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ@VGS=10V
- **Maximum drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI technology
- **Operating temperature range**: Typically between -55°C and +150°C
- **Model**: IRFP27N60KPBF-VB
- **Package**: TO247
- **MOSFET configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ@VGS=10V
- **Maximum drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI technology
- **Operating temperature range**: Typically between -55°C and +150°C
Domain and module applications：
Applications and modules:
1. **High Voltage Power Management**: The 650V high voltage capability of the IRFP27N60KPBF-VB makes it ideal for use in high voltage power management systems such as switching power supplies and power converters. It can effectively control the switching operation in high voltage applications to ensure the stability and reliability of the power system.
2. **Inverter**: In solar inverters and other high voltage inverter applications, the IRFP27N60KPBF-VB can handle high voltage current conversion, providing reliable performance and efficient power conversion.
3. **Industrial Motor Drive**: This MOSFET is suitable for motor drive systems that require high voltage and medium current, such as motor drive modules in industrial motor control and automation systems, and can provide stable switching control.
4. **Power Amplifier**: In power amplifier applications, especially audio amplifiers and RF amplifiers that need to handle high voltage, the IRFP27N60KPBF-VB can effectively manage high power signals and provide efficient switching performance.
The IRFP27N60KPBF-VB's high voltage tolerance and medium current handling capability enable it to excel in a variety of high-power, high-voltage applications, such as power management, motor drive, and power amplification.
1. **High Voltage Power Management**: The 650V high voltage capability of the IRFP27N60KPBF-VB makes it ideal for use in high voltage power management systems such as switching power supplies and power converters. It can effectively control the switching operation in high voltage applications to ensure the stability and reliability of the power system.
2. **Inverter**: In solar inverters and other high voltage inverter applications, the IRFP27N60KPBF-VB can handle high voltage current conversion, providing reliable performance and efficient power conversion.
3. **Industrial Motor Drive**: This MOSFET is suitable for motor drive systems that require high voltage and medium current, such as motor drive modules in industrial motor control and automation systems, and can provide stable switching control.
4. **Power Amplifier**: In power amplifier applications, especially audio amplifiers and RF amplifiers that need to handle high voltage, the IRFP27N60KPBF-VB can effectively manage high power signals and provide efficient switching performance.
The IRFP27N60KPBF-VB's high voltage tolerance and medium current handling capability enable it to excel in a variety of high-power, high-voltage applications, such as power management, motor drive, and power amplification.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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