IRFP26N60LPBF-VB Product details
Product introduction:
IRFP26N60LPBF-VB is a high-voltage single N-channel MOSFET in TO247 package, designed for high-voltage applications. It has a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V, enabling it to handle extremely high voltage conditions without losing stability. The threshold voltage (Vth) of this MOSFET is 3.5V, the on-resistance (RDS(ON)) is 160mΩ (at VGS=10V), and the maximum drain current is 20A. IRFP26N60LPBF-VB uses SJ_Multi-EPI technology to provide excellent switching performance and thermal stability, suitable for high-voltage, high-power power control applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
- **Package**: TO247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS=10V
- **Maximum drain current (ID)**: 20A
- **Technology type**: SJ_Multi-EPI
Domain and module applications:
IRFP26N60LPBF-VB performs well in multiple high voltage and high power applications. Here are some specific application fields:
1. **High voltage switching power supply (SMPS)**: The high voltage withstand capability of this MOSFET makes it very suitable for the switch tube part of the high voltage switching power supply. In a high voltage environment, the IRFP26N60LPBF-VB can stably handle large currents and provide efficient power conversion, ensuring the stability and reliability of the power supply.
2. **DC-DC converter**: In a DC-DC converter with high voltage input, the IRFP26N60LPBF-VB can be used as the main switching element to handle higher voltage and current loads to achieve efficient voltage conversion and stable output.
3. **Motor drive circuit**: In industrial motor drive systems, this MOSFET can handle high voltage and high current loads, and is suitable for the switch part in the motor control circuit, providing efficient motor drive and stable performance.
4. **Inverter System**: The IRFP26N60LPBF-VB is suitable for use in solar inverters and other high-voltage inverters. It can process high-voltage DC power and convert it to AC power, supporting efficient power conversion and system stability.
5. **Power Management System**: In battery management systems and power protection modules, the IRFP26N60LPBF-VB can be used as a high-voltage switch to provide reliable current control and protection functions to ensure the safety and stability of the power system.
These application examples demonstrate the superior performance of the IRFP26N60LPBF-VB in high-voltage, high-power environments, making it an ideal choice for high-voltage switches and power control systems.
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