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IRFP264PBF-VB Product details
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1. IRFP264PBF-VB Product Introduction
IRFP264PBF-VB is a single N-channel MOSFET in TO247 package with a drain-source voltage (VDS) of 250V and a gate-source voltage (VGS) of ±20V. Its gate threshold voltage (Vth) is 3.5V, the on-resistance (RDS(ON)) is 40mΩ (at VGS of 10V), and the maximum current carrying capacity is 60A. This MOSFET is manufactured based on trench technology and is designed to meet the needs of high voltage and high current applications such as power amplifiers, high power supplies, and motor drive systems.
IRFP264PBF-VB is a single N-channel MOSFET in TO247 package with a drain-source voltage (VDS) of 250V and a gate-source voltage (VGS) of ±20V. Its gate threshold voltage (Vth) is 3.5V, the on-resistance (RDS(ON)) is 40mΩ (at VGS of 10V), and the maximum current carrying capacity is 60A. This MOSFET is manufactured based on trench technology and is designed to meet the needs of high voltage and high current applications such as power amplifiers, high power supplies, and motor drive systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 250V | 3.5V | 60A | 40mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 250V | 3.5V | 60A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 250V | 3.5V | 60A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
2. IRFP264PBF-VB detailed parameter description
- **Package type**: TO247
- **Configuration**: Single N-channel
- **Breakdown voltage (VDS)**: 250V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 40mΩ@VGS=10V
- **Current (ID)**: 60A
- **Technology type**: Trench
- **Power consumption**: 94W (maximum power consumption depends on heat dissipation conditions)
- **Operating temperature range**: -55°C to +150°C
- **Maximum pulsed drain current**: 240A
- **Input capacitance (Ciss)**: 6500pF
- **Output capacitance (Coss)**: 1000pF
- **Reverse recovery time (trr)**: 150ns
- **Package type**: TO247
- **Configuration**: Single N-channel
- **Breakdown voltage (VDS)**: 250V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 40mΩ@VGS=10V
- **Current (ID)**: 60A
- **Technology type**: Trench
- **Power consumption**: 94W (maximum power consumption depends on heat dissipation conditions)
- **Operating temperature range**: -55°C to +150°C
- **Maximum pulsed drain current**: 240A
- **Input capacitance (Ciss)**: 6500pF
- **Output capacitance (Coss)**: 1000pF
- **Reverse recovery time (trr)**: 150ns
Domain and module applications：
3. Application fields and module examples
1. **High-power power system**
IRFP264PBF-VB is suitable for switch control of high-power power systems. Its high voltage withstand capability of 250V and low on-resistance make it ideal for use in high-voltage power converters and high-power DC-DC converters to improve system efficiency and reduce energy loss.
2. **Power amplifier**
In audio and RF power amplifier applications, this MOSFET can be used as the main switch or amplifier component. Its high current carrying capability and low RDS(ON) characteristics ensure stable and efficient performance in high-power amplification applications.
3. **Motor drive system**
IRFP264PBF-VB also performs well in motor drive applications, especially in electric vehicles and industrial motor drive systems that require high current and high voltage. Its high current capability and low on-resistance help achieve efficient motor control.
4. **Inverter and Battery Management**
In inverter and battery management systems, the high voltage and high current capabilities of this MOSFET enable it to handle the high power demands in battery charging and power conversion. Its low on-resistance helps improve the overall efficiency of the inverter and ensures the reliability and stability of the battery management system.
1. **High-power power system**
IRFP264PBF-VB is suitable for switch control of high-power power systems. Its high voltage withstand capability of 250V and low on-resistance make it ideal for use in high-voltage power converters and high-power DC-DC converters to improve system efficiency and reduce energy loss.
2. **Power amplifier**
In audio and RF power amplifier applications, this MOSFET can be used as the main switch or amplifier component. Its high current carrying capability and low RDS(ON) characteristics ensure stable and efficient performance in high-power amplification applications.
3. **Motor drive system**
IRFP264PBF-VB also performs well in motor drive applications, especially in electric vehicles and industrial motor drive systems that require high current and high voltage. Its high current capability and low on-resistance help achieve efficient motor control.
4. **Inverter and Battery Management**
In inverter and battery management systems, the high voltage and high current capabilities of this MOSFET enable it to handle the high power demands in battery charging and power conversion. Its low on-resistance helps improve the overall efficiency of the inverter and ensures the reliability and stability of the battery management system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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